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TMS27C49-5JL

Texas Instruments

TMS27C49-5JL by Texas Instruments

TMS27C49-5JL by Texas Instruments is an 8KX8 EPROM with 70°C max temp, 55 ns access time, and 65536 bit memory density. It operates at 5V and has a parallel interface. Ideal for commercial applications requiring non-volatile memory storage in a compact IN-LINE package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,745 parts In-Stock

1+ parts

-

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4,745

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Digiode

USA . 828 parts In-Stock

1+ parts

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828

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 877 parts In-Stock

1+ parts

$4.251

100+ parts

-

1k+ parts

$4.684

10k+ parts

-

877

$4.251

-

$4.684

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DigiPath Technology Company

USA . 1,463 parts In-Stock

1+ parts

$4.680

100+ parts

$4.306

1k+ parts

-

10k+ parts

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1,463

$4.680

$4.306

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IDEA Electronic Components Group

UK . 1,164 parts In-Stock

1+ parts

$4.776

100+ parts

-

1k+ parts

$4.298

10k+ parts

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1,164

$4.776

-

$4.298

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ChromeModa Solutions

Germany . 104 parts In-Stock

1+ parts

$4.776

100+ parts

$3.916

1k+ parts

-

10k+ parts

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104

$4.776

$3.916

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AZTECH Wire

Italy . 573 parts In-Stock

1+ parts

$10.540

100+ parts

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573

$10.540

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One Stop Electronics

USA . 313 parts In-Stock

1+ parts

$24.000

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313

$24.000

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Corphita

USA . 4,921 parts In-Stock

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4,921

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Overview

Unlock the power of reliable data storage with the TMS27C49-5JL EPROM from Texas Instruments. Designed with precision and durability in mind, this memory device offers unparalleled performance in a variety of applications. Whether you're working on industrial automation, telecommunications, or consumer electronics, this product delivers superior quality and value. Trust Texas Instruments to provide cutting-edge technology that exceeds your expectations. Elevate your projects with the TMS27C49-5JL EPROM today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired materials ensures high durability and reliability, making this EPROM a long-lasting choice.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and efficient communication with the EPROM, enhancing its usability in various applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this EPROM compatible with standard voltage requirements in most electronic systems.

Organization: 8KX8

With an organization of 8KX8, this EPROM provides a high storage capacity and efficient data organization, suitable for a wide range of applications.

Memory IC Type: UVPROM

Being a UVPROM type memory IC, this EPROM offers the additional benefit of being erasable and reprogrammable, making it a versatile and cost-effective choice.

Technical Specifications

EPROM TMS27C49-5JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

55 ns

JESD-30 Code:

R-CDIP-T24

Length:

31.75 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

TMS27C49-5JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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