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TMS27C512-15JL

Texas Instruments

TMS27C512-15JL by Texas Instruments

TMS27C512-15JL by Texas Instruments is a 64KX8 EPROM with 150 ns access time, 3-STATE output, and operates at 5V. Commonly used in commercial applications, it offers parallel input/output type and through-hole terminal form for easy integration into electronic systems.

Median Price

$5.450

Lifecycle Status

Suppliers In-Stock

39

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1k+

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American Microsemiconductor Inc.

USA . 7 parts In-Stock

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EXC GmbH

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Forefront Electronics and Design

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Vyrian

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Digiode

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Prism Electronics

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Pegasus Components GmbH

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Electronic Expediters

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J & M Industries LLC

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A2Z Electronics, Inc.

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ComSIT Distribution GmbH

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GES GmbH

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MISTER SPROCKETS

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Connector Distribution Corp

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Right Parts Inc.

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Holdelec - ElecDif-Pro

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PC Components Company LLC

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Semi Source

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Digital Electronic Gebert Verwaltungs UG

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Bristol Electronics

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Resion

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Manoshevitz Elec. Sales

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First Choice Components Inc.

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Inland Empire Components Inc.

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Cyclops Electronics Ltd

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Mil-Aero Solutions, Inc.

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Speed Components Ltd

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Parana Technologies

USA . 1,619 parts In-Stock

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$2.802

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DigiPath Technology Company

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ChromeModa Solutions

Germany . 3,984 parts In-Stock

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IDEA Electronic Components Group

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AZTECH Wire

Italy . 431 parts In-Stock

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One Stop Electronics

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Perfect Parts

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Lixinc

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Corphita

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A-Plus Industry Inc.

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Assy Fe

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GreenTree Electronics

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Overview

Unlock the power of reliable data storage with the TMS27C512-15JL by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality and performance in every product, including this EPROM. Ideal for a wide range of applications, this EPROM offers customers unparalleled value, benefits, and advantages. Experience seamless operation, superior functionality, and peace of mind knowing that your data is secure with the TMS27C512-15JL. Elevate your projects to the next level with this high-quality memory IC from a trusted brand.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This durable and high-quality construction material ensures reliability and longevity of the EPROM chip.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard 5V power supplies, making it easy to integrate into existing electronic systems.

Maximum Operating Temperature: 70 °C

Can safely operate under a wide range of temperatures, making it suitable for a variety of environments.

Organization: 64KX8

Provides a large memory capacity with a parallel organization for efficient data storage and retrieval.

Output Characteristics: 3-STATE

Allows for tri-state outputs, enabling multiple devices to share the same bus without conflict.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency of the EPROM chip.

Maximum Access Time: 150 ns

Fast access time ensures quick data retrieval, making the EPROM chip suitable for applications that require rapid response times.

Technical Specifications

EPROM TMS27C512-15JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C512-15JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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