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TMS27C010-25JL

Texas Instruments

TMS27C010-25JL by Texas Instruments

TMS27C010-25JL by Texas Instruments is a 128KX8 EPROM with 131072 words, 250 ns access time, and 5V supply voltage. It is used in commercial applications for storing data securely with its UVPROM technology and through-hole terminal form.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,702 parts In-Stock

1+ parts

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8,702

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Digiode

USA . 1,547 parts In-Stock

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1,547

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Q Components

USA . 3 parts In-Stock

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,995 parts In-Stock

1+ parts

$5.003

100+ parts

-

1k+ parts

$5.554

10k+ parts

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1,995

$5.003

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$5.554

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DigiPath Technology Company

USA . 1,958 parts In-Stock

1+ parts

$5.509

100+ parts

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1,958

$5.509

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IDEA Electronic Components Group

UK . 1,192 parts In-Stock

1+ parts

$5.621

100+ parts

-

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$5.059

10k+ parts

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1,192

$5.621

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$5.059

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ChromeModa Solutions

Germany . 184 parts In-Stock

1+ parts

$5.621

100+ parts

$4.609

1k+ parts

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184

$5.621

$4.609

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AZTECH Wire

Italy . 337 parts In-Stock

1+ parts

$5.770

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337

$5.770

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One Stop Electronics

USA . 962 parts In-Stock

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$30.000

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962

$30.000

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Corphita

USA . 4,990 parts In-Stock

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4,990

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Overview

Discover the cutting-edge TMS27C010-25JL by Texas Instruments, a top-tier EPROM that offers unparalleled quality and reliability. With a reputation for excellence in semiconductor manufacturing, Texas Instruments ensures that this product delivers superior performance in a variety of applications. From automotive to industrial automation, this EPROM is designed to meet your needs with ease. Experience the value and benefits of choosing Texas Instruments for your semiconductor needs, and unlock the advantages that the TMS27C010-25JL can bring to your project.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This package material provides excellent durability and protection for the EPROM, making it ideal for industrial or harsh environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent operation of the EPROM without the need for external synchronization signals, providing flexibility and ease of use.

Memory Density: 1048576 bit

With a high memory density, this EPROM can store a large amount of data, making it suitable for applications that require ample storage capacity.

Maximum Access Time: 250 ns

The fast access time of 250 ns ensures quick retrieval of data from the EPROM, enhancing overall performance and efficiency of the product.

Technical Specifications

EPROM TMS27C010-25JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T32

Length:

41.91 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

40 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C010-25JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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