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5962-9175205MXX

Texas Instruments

5962-9175205MXX by Texas Instruments

Texas Instruments' 5962-9175205MXX EPROM operates asynchronously with a supply voltage of 5V. It features 512KX8 organization, 524288 words, and a memory width of 8. Ideal for military applications due to its MIL-Grade technology and wide temperature range from -55°C to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,016 parts In-Stock

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Digiode

USA . 1,764 parts In-Stock

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Native Components

USA . 762 parts In-Stock

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$0.547

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762

$0.547

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Northwest PG Solutions

USA . 119 parts In-Stock

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$0.602

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$0.602

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Parana Technologies

USA . 1,246 parts In-Stock

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$1.959

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$2.493

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$1.959

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DigiPath Technology Company

USA . 2,205 parts In-Stock

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$2.157

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$1.984

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2,205

$2.157

$1.984

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ChromeModa Solutions

Germany . 4,633 parts In-Stock

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$2.201

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$1.805

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$2.201

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IDEA Electronic Components Group

UK . 1,303 parts In-Stock

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$2.201

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$1.981

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One Stop Electronics

USA . 470 parts In-Stock

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$8.000

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$8.000

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AZTECH Wire

Italy . 460 parts In-Stock

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$19.185

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Corphita

USA . 4,477 parts In-Stock

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Supply Digital

USA . 325 parts In-Stock

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Overview

Experience unparalleled quality and reliability with the Texas Instruments 5962-9175205MXX EPROM. As a leading manufacturer in the industry, Texas Instruments delivers cutting-edge technology that meets the highest standards. Ideal for military applications, this EPROM offers exceptional performance and durability. Unlock the potential of your projects with the unmatched value and benefits that this product provides. Trust in Texas Instruments to deliver excellence every time.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the internal components, ensuring reliable performance in various environments.

Operating Mode: ASYNCHRONOUS

Allows for independent operation of the memory without requiring synchronization, offering flexibility in data retrieval.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage supply ensures compatibility with common power sources.

Organization: 512KX8

Offers a high memory capacity of 512 kilobits organized in 8 bits, allowing for efficient data storage and retrieval.

Technology: CMOS

CMOS technology provides low power consumption, reducing energy costs and extending battery life in devices.

Maximum Access Time: 120 ns

Fast access time ensures quick retrieval of data, making the EPROM suitable for applications requiring high-speed performance.

Technical Specifications

EPROM 5962-9175205MXX attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

JESD-609 Code:

e0

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

7.493 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

5962-9175205MXX Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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