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TMS27C040-80JL

Texas Instruments

TMS27C040-80JL by Texas Instruments

TMS27C040-80JL by Texas Instruments is a 512KX8 EPROM with 80 ns access time, 5V supply voltage, and 32 terminals. It operates in asynchronous mode with a memory density of 4194304 bit. Commonly used for parallel applications requiring fast data access and reliable performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,852 parts In-Stock

1+ parts

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2,852

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Vyrian

USA . 2,603 parts In-Stock

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2,603

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,318 parts In-Stock

1+ parts

$2.516

100+ parts

-

1k+ parts

$3.005

10k+ parts

-

2,318

$2.516

-

$3.005

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DigiPath Technology Company

USA . 2,226 parts In-Stock

1+ parts

$2.770

100+ parts

$2.549

1k+ parts

-

10k+ parts

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2,226

$2.770

$2.549

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ChromeModa Solutions

Germany . 4,195 parts In-Stock

1+ parts

$2.827

100+ parts

$2.318

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-

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4,195

$2.827

$2.318

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IDEA Electronic Components Group

UK . 1,309 parts In-Stock

1+ parts

$2.827

100+ parts

-

1k+ parts

$2.544

10k+ parts

-

1,309

$2.827

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$2.544

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AZTECH Wire

Italy . 523 parts In-Stock

1+ parts

$12.615

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523

$12.615

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One Stop Electronics

USA . 343 parts In-Stock

1+ parts

$14.000

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343

$14.000

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Corphita

USA . 2,885 parts In-Stock

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2,885

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Overview

Unlock the power of reliable data storage with the TMS27C040-80JL EPROM by Texas Instruments. Known for their top-notch quality and innovative technology, Texas Instruments delivers exceptional products that meet the highest standards in the industry. Ideal for a wide range of applications, this EPROM offers customers unparalleled value, benefits, and advantages. Whether you're looking to enhance your electronics project or streamline your operations, the TMS27C040-80JL provides the perfect solution for all your memory needs. Trust Texas Instruments for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed body material offers excellent durability and protection for the EPROM, ensuring its longevity and reliability.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage provides compatibility with common power sources, making it easy to integrate into existing systems.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent and flexible operation, enhancing the versatility of the EPROM in different applications.

Memory Density: 4194304 bit

With a high memory density, this EPROM is capable of storing a large amount of data, making it ideal for applications requiring extensive memory storage.

Maximum Access Time: 80 ns

The fast access time of 80 ns ensures quick retrieval of data from the EPROM, enhancing overall system performance.

Technical Specifications

EPROM TMS27C040-80JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

80 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C040-80JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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