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TMS2532A-30JL

Texas Instruments

TMS2532A-30JL by Texas Instruments

TMS2532A-30JL by Texas Instruments is a 4KX8 EPROM with 24 terminals, operating b/w 0 to 70°C. It features a memory density of 32768 bits, outputting in 3-STATE mode. Ideal for applications requiring fast access times and reliable data storage in commercial-grade environments.

Median Price

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Lifecycle Status

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Vyrian

USA . 5,647 parts In-Stock

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MRC Electronics

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Halfin

Belgium . 101 parts In-Stock

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LWI Electronics Inc

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Digiode

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ACDS - Activité Composants Distribution Service

France . 48 parts In-Stock

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ECAB

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Sinequanon

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Q Components

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Parana Technologies

USA . 1,942 parts In-Stock

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$4.245

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$4.679

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DigiPath Technology Company

USA . 2,228 parts In-Stock

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$4.675

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$4.301

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ChromeModa Solutions

Germany . 2,520 parts In-Stock

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IDEA Electronic Components Group

UK . 156 parts In-Stock

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One Stop Electronics

USA . 464 parts In-Stock

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AZTECH Wire

Italy . 268 parts In-Stock

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Corphita

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Overview

Unlock the power of high-quality memory storage with the TMS2532A-30JL by Texas Instruments. Crafted from top-tier ceramic materials, this EPROM offers reliability and durability for a wide range of applications. With a 4KX8 organization and 3-STATE output characteristics, this device provides seamless data access with lightning-fast speeds. Whether you're in need of memory solutions for industrial automation or consumer electronics, the TMS2532A-30JL delivers unmatched performance and value. Trust Texas Instruments to deliver cutting-edge technology that meets your every memory storage need.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent thermal characteristics, ensuring the EPROM operates efficiently and reliably even at high temperatures.

No. of Terminals: 24

Having 24 terminals allows for greater connectivity and integration with other components in a circuit, making it versatile and adaptable.

Memory Width: 8

With a memory width of 8, this EPROM can store and process data efficiently, making it suitable for various applications that require medium-scale memory capacity.

Technology: MOS

MOS technology offers low power consumption and high-speed operation, making this EPROM energy-efficient and fast in data processing.

Maximum Access Time: 300 ns

The fast access time of 300 ns ensures quick retrieval of data, improving overall performance and responsiveness of the EPROM.

Technical Specifications

EPROM TMS2532A-30JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

300 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T24

Memory Density:

32768 bit

Memory Width:

8

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

EPROMs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2532A-30JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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