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TMS2532JL

Texas Instruments

TMS2532JL by Texas Instruments

TMS2532JL by Texas Instruments is a 4KX8 EPROM with 3-STATE output, 32768 bit memory density, and 450 ns access time. It is commonly used in commercial applications requiring reliable non-volatile memory storage in a ceramic rectangular package with through-hole terminals.

Median Price

$19.600

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

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Forefront Electronics and Design

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Vyrian

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Digiode

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Halfin

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Inland Empire Components Inc.

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Electronic Expediters

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A&K Electronics

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Zilex Electronics Inc.

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ECAB

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Electronics Depot

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LIBRA Elektronik GmbH

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MRC Electronics

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Carlin Systems, Inc.

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Corel Iberica Componentes, S.L.

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ABC Electronics Ltd.

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Lakeland Logistics Inc

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Bristol Electronics

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Prism Electronics

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Ack Elektronik San.Tic.Ltd.Sti

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Digital Electronic Gebert Verwaltungs UG

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Parana Technologies

USA . 344 parts In-Stock

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DigiPath Technology Company

USA . 2,028 parts In-Stock

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$3.706

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ChromeModa Solutions

Germany . 5,960 parts In-Stock

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IDEA Electronic Components Group

UK . 1,730 parts In-Stock

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One Stop Electronics

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AZTECH Wire

Italy . 313 parts In-Stock

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Authorized Procurement Solutions

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Corphita

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Assy Fe

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A-Plus Industry Inc.

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Overview

Unlock endless possibilities with the TMS2532JL EPROM by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers cutting-edge technology that is trusted by professionals worldwide. This EPROM offers a wide range of applications, making it versatile and essential for various projects. Experience the value and benefits of this product as it provides fast access times and a high memory density, ensuring seamless performance for your needs. Trust Texas Instruments to deliver unmatched quality and innovation in the world of electronics.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packaging provides excellent protection against environmental factors like moisture and temperature, ensuring the longevity and reliability of the EPROM.

No. of Words: 4096 words

With a large number of words, this EPROM has a high memory capacity, making it suitable for storing a wide range of data and programs.

Output Characteristics: 3-STATE

The 3-state output allows the EPROM to have multiple output states, enabling efficient data transmission and processing in various applications.

Technology: MOS

MOS technology offers low power consumption and high-speed performance, making this EPROM energy-efficient and responsive.

Maximum Access Time: 450 ns

The fast access time of 450 ns ensures quick retrieval of data, enabling smooth operation and performance in time-sensitive applications.

Technical Specifications

EPROM TMS2532JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

450 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T24

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Sub-Category:

EPROMs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS2532JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

NSN

5962-01-239-9676, 5962012399676, 5962-01-189-7756, 5962011897756

NIIN

012399676, 011897756

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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