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SMJ27C210-25JM

Texas Instruments

SMJ27C210-25JM by Texas Instruments

The Texas Instruments SMJ27C210-25JM is a 64KX16 EPROM with 3-STATE output, operating at temperatures from -55 to 125 °C. It features a supply voltage of 5V and access time of 250 ns, suitable for military-grade applications requiring high memory density and parallel operation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,792 parts In-Stock

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2,792

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Digiode

USA . 1,657 parts In-Stock

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1,657

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 267 parts In-Stock

1+ parts

$3.295

100+ parts

$305.970

1k+ parts

$2.965

10k+ parts

-

267

$3.295

$305.970

$2.965

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DigiPath Technology Company

USA . 1,734 parts In-Stock

1+ parts

$3.628

100+ parts

-

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1,734

$3.628

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IDEA Electronic Components Group

UK . 2,303 parts In-Stock

1+ parts

$3.702

100+ parts

-

1k+ parts

$3.332

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2,303

$3.702

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$3.332

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ChromeModa Solutions

Germany . 450 parts In-Stock

1+ parts

$3.702

100+ parts

$3.036

1k+ parts

-

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450

$3.702

$3.036

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One Stop Electronics

USA . 1,607 parts In-Stock

1+ parts

$4.000

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1,607

$4.000

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AZTECH Wire

Italy . 329 parts In-Stock

1+ parts

$16.093

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329

$16.093

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Corphita

USA . 1,247 parts In-Stock

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Overview

Unlock the power of advanced technology with the SMJ27C210-25JM by Texas Instruments, a high-quality EPROM that offers unmatched reliability and performance. Manufactured by a trusted industry leader, this product is perfect for a wide range of applications. With its impressive features and specifications, the SMJ27C210-25JM provides customers with exceptional value and benefits. Experience the advantages of this cutting-edge memory IC type, and elevate your projects to new heights with ease. Trust Texas Instruments to deliver excellence with every product they create.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed package body material provides durability and reliability, making this EPROM a good choice for rugged applications.

Screening Level: 38535Q/M;38534H;883B

Having undergone rigorous screening levels ensures high quality and reliability, making this EPROM a suitable choice for critical applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V is a common standard, making this EPROM compatible with many existing systems and easy to integrate.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent control of operations, providing flexibility and versatility in usage scenarios.

No. of Words: 65536 words

With a large number of words available for storage, this EPROM offers ample memory capacity for data retention and retrieval.

Maximum Operating Temperature: 125 °C

The EPROM can withstand high operating temperatures, making it suitable for demanding environments where temperature fluctuations may occur.

Technology: CMOS

Utilizing CMOS technology offers low power consumption and high noise immunity, making this EPROM energy-efficient and reliable for long-term use.

Technical Specifications

EPROM SMJ27C210-25JM attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T40

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

40

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

64KX16

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP40,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

4.907 mm

Sub-Category:

EPROMs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

SMJ27C210-25JM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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