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SMJ27C010A-20J

Texas Instruments

SMJ27C010A-20J by Texas Instruments

SMJ27C010A-20J by Texas Instruments is a 128KX8 EPROM with 3-STATE output, operating at -55 to 125 °C. It has a supply voltage range of 4.5V to 5.5V and offers fast access time of 200 ns. Ideal for military-grade applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,084 parts In-Stock

1+ parts

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5,084

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Digiode

USA . 1,029 parts In-Stock

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1,029

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,215 parts In-Stock

1+ parts

$3.461

100+ parts

-

1k+ parts

$3.985

10k+ parts

-

1,215

$3.461

-

$3.985

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DigiPath Technology Company

USA . 2,038 parts In-Stock

1+ parts

$3.811

100+ parts

$3.506

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-

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2,038

$3.811

$3.506

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ChromeModa Solutions

Germany . 1,402 parts In-Stock

1+ parts

$3.889

100+ parts

$3.189

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-

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1,402

$3.889

$3.189

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IDEA Electronic Components Group

UK . 367 parts In-Stock

1+ parts

$3.889

100+ parts

-

1k+ parts

$3.500

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367

$3.889

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$3.500

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AZTECH Wire

Italy . 290 parts In-Stock

1+ parts

$6.430

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290

$6.430

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One Stop Electronics

USA . 1,389 parts In-Stock

1+ parts

$23.000

100+ parts

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1,389

$23.000

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Corphita

USA . 3,305 parts In-Stock

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3,305

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Overview

Elevate your electronics with the SMJ27C010A-20J EPROM by Texas Instruments, a high-quality memory solution that offers unparalleled reliability and performance. Designed with precision in mind, this versatile component is ideal for a wide range of applications, from industrial automation to consumer electronics. With its advanced technology and military-grade construction, customers can trust in the durability and longevity of this product. Upgrade your projects with the SMJ27C010A-20J and experience the value it brings to every application.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides excellent protection for the EPROM chip, ensuring durability and reliability in harsh environments.

Operating Mode: ASYNCHRONOUS

Allows for independent and flexible access to memory locations, making it suitable for a wide range of applications.

Nominal Supply Voltage (V): 5

Standard voltage requirement that is widely available, ensuring compatibility with most systems.

Maximum Operating Temperature: 125 °C

Can operate in high-temperature environments without performance degradation, ideal for industrial or military use.

Technology: CMOS

Low power consumption and high noise immunity, prolonging battery life in portable devices and enhancing reliability.

Memory Density: 1048576 bit

Large memory capacity allows for storing a significant amount of data, suitable for complex applications.

Maximum Access Time: 200 ns

Quick access to data ensures fast performance, making it suitable for applications requiring rapid data retrieval.

Technical Specifications

EPROM SMJ27C010A-20J attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

JESD-30 Code:

R-GDIP-T32

Length:

41.91 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

SMJ27C010A-20J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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