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SMJ2532-45JM

Texas Instruments

SMJ2532-45JM by Texas Instruments

The Texas Instruments SMJ2532-45JM EPROM features 4Kx8 organization, 3-STATE output, and 32768-bit memory density. Ideal for military applications with a temperature range of -55 to 125°C, this UVPROM has a max access time of 450ns and comes in a ceramic rectangular package with 24 terminals.

Median Price

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Lifecycle Status

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6

In-Stock Inventory

1k+

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Vyrian

USA . 4,264 parts In-Stock

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Digiode

USA . 4,095 parts In-Stock

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Electronic Expediters

USA . 158 parts In-Stock

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R&J Components

USA . 24 parts In-Stock

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Electronics Depot

USA . 6 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 5 parts In-Stock

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Parana Technologies

USA . 1,817 parts In-Stock

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$3.816

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$4.305

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DigiPath Technology Company

USA . 1,820 parts In-Stock

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$4.202

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$3.866

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ChromeModa Solutions

Germany . 5,991 parts In-Stock

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IDEA Electronic Components Group

UK . 1,150 parts In-Stock

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$3.859

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One Stop Electronics

USA . 331 parts In-Stock

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AZTECH Wire

Italy . 515 parts In-Stock

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Corphita

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Overview

Unlock the power of innovation with the SMJ2532-45JM EPROM by Texas Instruments. As a trusted manufacturer, Texas Instruments delivers top-quality products that meet the highest industry standards. Ideal for military-grade applications, this EPROM offers reliable performance in extreme conditions. With a memory density of 32768 bits and a fast access time of 450 ns, this EPROM provides unparalleled value and efficiency. Trust Texas Instruments to provide cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent protection against moisture, temperature fluctuations, and mechanical stress, ensuring the durability and reliability of the EPROM.

Screening Level: 38535Q/M;38534H;883B

This EPROM undergoes stringent quality screening processes, ensuring high reliability, performance, and adherence to military standards.

Input/Output Type: COMMON

Common input/output type simplifies the interfacing of the EPROM with other components, making it easier to integrate into electronic systems.

No. of Terminals: 24

Having 24 terminals allows for multiple connections enabling versatile usage scenarios and increased functionality of the EPROM in various applications.

Package Style (Meter): IN-LINE

The in-line package style facilitates easy installation or replacement of the EPROM in electronic circuits, making it user-friendly.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this EPROM can withstand elevated temperatures without compromising its performance, making it suitable for harsh environments.

Organization: 4KX8

The 4Kx8 organization means that this EPROM has a capacity of storing 4096 words with a width of 8 bits each, providing sufficient memory for storing data efficiently.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow the EPROM to have three states - high impedance, logic high, and logic low, providing flexibility in controlling the output and enhancing circuit design.

Minimum Operating Temperature: -55 °C

The EPROM can operate reliably at very low temperatures down to -55°C, making it suitable for use in extreme cold environments.

Terminal Position: DUAL

The dual terminal position provides redundancy and improves the reliability of connections, reducing the risk of signal loss or faulty operation.

Temperature Grade: MILITARY

Being classified as military-grade ensures that this EPROM meets strict performance and reliability standards, making it ideal for mission-critical military or aerospace applications.

Technology: MOS

Using Metal-Oxide-Semiconductor technology enhances the speed, efficiency, and reliability of the EPROM, making it a preferred choice for high-performance electronic systems.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies the soldering and mounting process, ensuring secure connections and stable performance of the EPROM in the circuit.

No. of Words: 4096 words

Having a capacity of 4096 words enables the EPROM to store a significant amount of data, meeting the memory requirements of various applications.

Memory Width: 8

With a memory width of 8 bits, this EPROM can process and store data in 8-bit chunks, enhancing data handling efficiency and compatibility with other components.

Terminal Pitch: 2.54 mm

The 2.54 mm terminal pitch allows for easy connection to standard spacing on electronic boards, facilitating integration and compatibility with existing setups.

No. of Words Code: 4K

Identified with a 4K words code, this EPROM has a memory capacity of 4 kilowords, providing ample storage space for program codes and data.

Memory Density: 32768 bit

With a memory density of 32768 bits, this EPROM offers high storage capacity, enabling the storage of a large amount of data or program codes effectively.

Memory IC Type: UVPROM

Utilizing Ultra-Violet erasable programmable read-only memory technology allows for easy reprogramming of the EPROM without the need for specialized equipment, enhancing flexibility and usability.

Maximum Access Time: 450 ns

Having a fast maximum access time of 450 nanoseconds ensures quick retrieval of data, minimizing delays and improving the overall performance of the EPROM in time-critical applications.

Technical Specifications

EPROM SMJ2532-45JM attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

450 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T24

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

EPROMs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SMJ2532-45JM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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