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SMJ27C040-10JM

Texas Instruments

SMJ27C040-10JM by Texas Instruments

SMJ27C040-10JM by Texas Instruments is a 512KX8 EPROM with 3-STATE output, operating at -55 to 125 °C. It has a supply voltage of 4.5-5.5V and max access time of 100ns. Ideal for military-grade applications requiring high memory density and fast data retrieval in parallel configuration.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,576 parts In-Stock

1+ parts

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4,576

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Digiode

USA . 687 parts In-Stock

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687

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Distributors (Availability)

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One Stop Electronics

USA . 1,365 parts In-Stock

1+ parts

$5.000

100+ parts

-

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1,365

$5.000

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Parana Technologies

USA . 1,856 parts In-Stock

1+ parts

$5.184

100+ parts

-

1k+ parts

$5.788

10k+ parts

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1,856

$5.184

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$5.788

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ChromeModa Solutions

Germany . 5,651 parts In-Stock

1+ parts

$5.825

100+ parts

$4.776

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5,651

$5.825

$4.776

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IDEA Electronic Components Group

UK . 227 parts In-Stock

1+ parts

$5.825

100+ parts

-

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$5.242

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227

$5.825

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$5.242

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AZTECH Wire

Italy . 869 parts In-Stock

1+ parts

$18.780

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869

$18.780

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Corphita

USA . 4,213 parts In-Stock

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4,213

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DigiPath Technology Company

USA . 1,853 parts In-Stock

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$5.252

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1,853

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$5.252

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Overview

Enhance your electronic devices with the SMJ27C040-10JM EPROM from Texas Instruments, a leading manufacturer known for its superior quality and reliability. Ideal for military-grade applications, this memory chip offers a high level of performance and durability. With a 512KX8 organization and 3-STATE output characteristics, this UVPROM technology-based product provides customers with fast access times and low standby current consumption. Upgrade your projects with the innovative technology and unmatched value of the SMJ27C040-10JM EPROM.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material provides durability and a high level of protection, ensuring long-term reliability and performance of the EPROM.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent data transfers, making the EPROM suitable for various applications that require non-synchronous communication.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with standard power supply units, making integration into existing systems easier.

Organization: 512KX8

The 512KX8 organization provides a high memory capacity with efficient data storage and retrieval capabilities, making the EPROM suitable for storing large amounts of information.

Technology: CMOS

The CMOS technology used in the EPROM reduces power consumption while maintaining high-speed operation, making it an energy-efficient choice for applications that require low power consumption.

Maximum Access Time: 100 ns

The maximum access time of 100 ns ensures fast read and write operations, making the EPROM suitable for applications that require quick data retrieval and storage.

Technical Specifications

EPROM SMJ27C040-10JM attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

100 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Length:

41.91 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

SMJ27C040-10JM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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