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TMS27C256-120JE

Texas Instruments

TMS27C256-120JE by Texas Instruments

TMS27C256-120JE by Texas Instruments is a 32KX8 EPROM with 120 ns access time, 5V supply voltage, and 3-STATE output. Ideal for industrial applications requiring reliable non-volatile memory storage in a ceramic package with through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,689 parts In-Stock

1+ parts

-

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2,689

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Digiode

USA . 2,381 parts In-Stock

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2,381

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 502 parts In-Stock

1+ parts

$2.937

100+ parts

-

1k+ parts

$3.437

10k+ parts

-

502

$2.937

-

$3.437

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DigiPath Technology Company

USA . 2,374 parts In-Stock

1+ parts

$3.234

100+ parts

-

1k+ parts

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2,374

$3.234

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ChromeModa Solutions

Germany . 6,275 parts In-Stock

1+ parts

$3.300

100+ parts

$2.706

1k+ parts

-

10k+ parts

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6,275

$3.300

$2.706

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IDEA Electronic Components Group

UK . 2,345 parts In-Stock

1+ parts

$3.300

100+ parts

-

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$2.970

10k+ parts

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2,345

$3.300

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$2.970

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One Stop Electronics

USA . 954 parts In-Stock

1+ parts

$12.000

100+ parts

-

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954

$12.000

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AZTECH Wire

Italy . 845 parts In-Stock

1+ parts

$14.593

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845

$14.593

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Corphita

USA . 4,508 parts In-Stock

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Overview

Unlock the power of innovation with the TMS27C256-120JE EPROM by Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers cutting-edge technology for a wide range of applications. This EPROM offers customers unmatched value with fast access times, high memory density, and low standby current. Experience seamless performance and enhanced efficiency with this versatile memory IC. Upgrade your projects today with Texas Instruments EPROM technology.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed body material ensures durability and reliability for long-term use.

Nominal Supply Voltage / Vsup (V): 5

A 5V nominal supply voltage helps in efficient power management and compatibility with standard electronic systems.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent control of input and output operations, improving overall performance.

Organization: 32KX8

With a 32KX8 organization, this EPROM offers high memory capacity with efficient data storage and retrieval capabilities.

Technology: CMOS

The CMOS technology used in this EPROM ensures low power consumption and reliable operation in various industrial environments.

Maximum Access Time: 120 ns

The fast 120 ns maximum access time ensures quick data access and processing, making this EPROM suitable for high-speed applications.

Technical Specifications

EPROM TMS27C256-120JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C256-120JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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