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TMS27C240-120JE

Texas Instruments

TMS27C240-120JE by Texas Instruments

TMS27C240-120JE by Texas Instruments is a 256KX16 EPROM with 120 ns access time, operating at 5V. It features a 3-STATE output and INDUSTRIAL temperature grade. Commonly used in applications requiring fast, non-volatile memory storage with parallel interface.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,478 parts In-Stock

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8,478

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Digiode

USA . 3,436 parts In-Stock

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3,436

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Distributors (Availability)

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Parana Technologies

USA . 2,217 parts In-Stock

1+ parts

$2.149

100+ parts

-

1k+ parts

$2.663

10k+ parts

-

2,217

$2.149

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$2.663

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DigiPath Technology Company

USA . 1,279 parts In-Stock

1+ parts

$2.367

100+ parts

$2.177

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-

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1,279

$2.367

$2.177

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ChromeModa Solutions

Germany . 2,142 parts In-Stock

1+ parts

$2.415

100+ parts

$1.980

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-

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2,142

$2.415

$1.980

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IDEA Electronic Components Group

UK . 1,908 parts In-Stock

1+ parts

$2.415

100+ parts

-

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$2.174

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1,908

$2.415

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$2.174

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AZTECH Wire

Italy . 631 parts In-Stock

1+ parts

$7.065

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631

$7.065

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One Stop Electronics

USA . 186 parts In-Stock

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$29.000

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186

$29.000

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Corphita

USA . 1,499 parts In-Stock

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1,499

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Overview

Discover the cutting-edge technology of the TMS27C240-120JE EPROM by Texas Instruments, a true game-changer in memory ICs. With its top-tier quality and reliability, this product is designed to meet the demands of industrial applications. Offering a wide range of benefits such as fast access time and low power consumption, the TMS27C240-120JE provides exceptional value to customers seeking high-performance memory solutions. Trust Texas Instruments for innovative products that deliver unmatched performance and reliability in every application.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed materials ensures durability and protection for the EPROM, making it suitable for rugged industrial environments.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent functioning of the EPROM, providing flexibility and efficient performance.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with a wide range of systems, making it versatile and easy to integrate.

Memory Density: 4194304 bit

With a high memory density, this EPROM can store a large amount of data, making it suitable for applications requiring extensive memory capacity.

Maximum Access Time: 120 ns

The fast access time of 120 ns allows for quick retrieval of data, enhancing the overall performance of the EPROM in processing time-sensitive tasks.

Technical Specifications

EPROM TMS27C240-120JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T40

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

40

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP40,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C240-120JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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