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TMS27C128-20JE

Texas Instruments

TMS27C128-20JE by Texas Instruments

TMS27C128-20JE by Texas Instruments is a 16KX8 EPROM with 200ns access time, 3-STATE output, and operates at -40 to 85 °C. It is used in industrial applications for memory storage due to its 131072 bit density and parallel interface.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,354 parts In-Stock

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6,354

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Digiode

USA . 4,517 parts In-Stock

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4,517

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GES GmbH

Germany . 133 parts In-Stock

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133

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 691 parts In-Stock

1+ parts

$4.152

100+ parts

$385.562

1k+ parts

$3.737

10k+ parts

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691

$4.152

$385.562

$3.737

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DigiPath Technology Company

USA . 2,230 parts In-Stock

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$4.572

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$4.206

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-

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2,230

$4.572

$4.206

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IDEA Electronic Components Group

UK . 1,788 parts In-Stock

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$4.665

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$4.198

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1,788

$4.665

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$4.198

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ChromeModa Solutions

Germany . 617 parts In-Stock

1+ parts

$4.665

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$3.825

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617

$4.665

$3.825

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One Stop Electronics

USA . 485 parts In-Stock

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$5.000

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485

$5.000

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AZTECH Wire

Italy . 457 parts In-Stock

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$9.114

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457

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Corphita

USA . 3,392 parts In-Stock

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Overview

Unlock the power of Texas Instruments with the TMS27C128-20JE EPROM, a high-quality memory IC designed for industrial applications. With a reliable ceramic and glass-sealed package body, this device offers a wide operating temperature range and low standby current. Ideal for storing critical data in harsh environments, the TMS27C128-20JE provides customers with peace of mind knowing their information is secure. Trust in Texas Instruments' expertise and invest in the innovative technology of the TMS27C128-20JE EPROM for your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material provides durability and protection for the EPROM, ensuring reliable performance in various environments.

Organization: 16KX8

With an organization of 16KX8, this EPROM offers a good balance between memory capacity and efficient data retrieval, making it suitable for a wide range of applications.

Technology: CMOS

Utilizing CMOS technology, this EPROM offers low power consumption and high speed operation, making it energy-efficient and ideal for battery-powered devices.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this EPROM can withstand high heat conditions, ensuring reliability in challenging environments.

Maximum Access Time: 200 ns

The fast access time of 200 ns ensures quick data retrieval and efficient performance, making this EPROM suitable for applications where speed is essential.

Technical Specifications

EPROM TMS27C128-20JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Length:

36.83 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C128-20JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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