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TMS2532A-45JL

Texas Instruments

TMS2532A-45JL by Texas Instruments

TMS2532A-45JL by Texas Instruments is a 4KX8 EPROM with 3-STATE output, 450 ns access time, and 32768 bit memory density. It is commonly used in commercial applications requiring fast data retrieval and storage in devices operating b/w 0 to 70 °C temperatures.

Median Price

$8.429

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

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Freelance Electronics

USA . 2 parts In-Stock

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Vyrian

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Digiode

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Atlantic Semiconductor

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Mil-Aero Solutions, Inc.

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Resion

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Q Components

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ComSIT Distribution GmbH

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Sunrise Surplus Inc.

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ACDS - Activité Composants Distribution Service

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J & M Industries LLC

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Standard Data Resources

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Lakeland Logistics Inc

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Extreme Components

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MRC Electronics

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Pegasus Components GmbH

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Electronic Expediters

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Sinequanon

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PC Components Company LLC

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ECAB

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Electronics Depot

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Parana Technologies

USA . 142 parts In-Stock

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DigiPath Technology Company

USA . 1,891 parts In-Stock

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$2.589

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ChromeModa Solutions

Germany . 4,039 parts In-Stock

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IDEA Electronic Components Group

UK . 1,901 parts In-Stock

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AZTECH Wire

Italy . 770 parts In-Stock

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One Stop Electronics

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A-Z Elektronik GmbH

Germany . 6,581 parts In-Stock

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Corphita

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Perfect Parts

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Glotronic Ltd.

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A-Plus Industry Inc.

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Overview

Experience exceptional quality and reliability with the TMS2532A-45JL EPROM from Texas Instruments. This innovative product offers unmatched performance and versatility in a wide range of applications. With Texas Instruments' reputation for excellence in semiconductor manufacturing, you can trust that this EPROM delivers superior value and benefits to meet your specific needs. Upgrade your projects with the TMS2532A-45JL and unlock a world of possibilities!

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent protection against environmental factors like moisture and temperature fluctuations, ensuring the longevity and reliability of the EPROM.

No. of Terminals: 24

Having 24 terminals allows for a sufficient number of connections for data input/output, addressing, and control signals, making the EPROM versatile and suitable for various applications.

Technology: MOS

The Metal-Oxide-Semiconductor technology used in this EPROM offers low power consumption and high speed performance, making it an efficient choice for memory storage.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this EPROM can function reliably even in demanding environments without the risk of overheating.

Technical Specifications

EPROM TMS2532A-45JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

450 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T24

Memory Density:

32768 bit

Memory Width:

8

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

EPROMs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2532A-45JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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