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TMS2532A-35JP4

Texas Instruments

TMS2532A-35JP4 by Texas Instruments

TMS2532A-35JP4 by Texas Instruments is a 4KX8 EPROM with 3-STATE output, 350 ns access time, and 32768 bit memory density. It is commonly used in commercial applications requiring fast data retrieval and storage in a compact IN-LINE package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,636 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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8,636

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-

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Digiode

USA . 3,054 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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3,054

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,000 parts In-Stock

1+ parts

$4.022

100+ parts

-

1k+ parts

$4.486

10k+ parts

-

1,000

$4.022

-

$4.486

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DigiPath Technology Company

USA . 912 parts In-Stock

1+ parts

$4.429

100+ parts

$4.074

1k+ parts

-

10k+ parts

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912

$4.429

$4.074

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IDEA Electronic Components Group

UK . 1,431 parts In-Stock

1+ parts

$4.519

100+ parts

-

1k+ parts

$4.067

10k+ parts

-

1,431

$4.519

-

$4.067

-

ChromeModa Solutions

Germany . 756 parts In-Stock

1+ parts

$4.519

100+ parts

$3.706

1k+ parts

-

10k+ parts

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756

$4.519

$3.706

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AZTECH Wire

Italy . 338 parts In-Stock

1+ parts

$6.620

100+ parts

-

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10k+ parts

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338

$6.620

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One Stop Electronics

USA . 672 parts In-Stock

1+ parts

$26.000

100+ parts

-

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672

$26.000

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Corphita

USA . 2,625 parts In-Stock

1+ parts

-

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2,625

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Overview

Enhance your electronics projects with the TMS2532A-35JP4 EPROM by Texas Instruments. Known for their exceptional quality and reliability, Texas Instruments delivers cutting-edge technology in a compact rectangular package. Perfect for a wide range of applications, this EPROM offers customers unparalleled value and benefits, including fast access times and 3-state output characteristics. Upgrade your designs today with the TMS2532A-35JP4 and experience the advantages of superior performance and durability.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent thermal conductivity and protection against humidity and mechanical stress, ensuring the durability and reliability of the product.

No. of Terminals: 24

Having 24 terminals allows for more connections and flexibility in system integration, making this product suitable for complex applications.

Organization: 4KX8

With an organization of 4Kx8, this EPROM offers a large capacity for storing data, making it suitable for applications that require high memory density.

Output Characteristics: 3-STATE

The 3-state output feature allows multiple devices to be connected to the same output line without causing conflicts, enhancing the versatility and scalability of the product.

Technology: MOS

MOS technology offers low power consumption, high speed, and reliability, making this EPROM an efficient and reliable choice for various applications.

Technical Specifications

EPROM TMS2532A-35JP4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

350 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T24

Memory Density:

32768 bit

Memory Width:

8

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Sub-Category:

EPROMs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS2532A-35JP4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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