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TMS2764A-25JL

Texas Instruments

TMS2764A-25JL by Texas Instruments

TMS2764A-25JL by Texas Instruments is an EPROM with 8KX8 organization, 65536 bit memory density, and 250 ns max access time. It operates in asynchronous mode at a supply voltage of 5V, suitable for commercial temperature grade applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,944 parts In-Stock

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3,944

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Vyrian

USA . 2,859 parts In-Stock

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2,859

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,318 parts In-Stock

1+ parts

$4.153

100+ parts

-

1k+ parts

$4.598

10k+ parts

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2,318

$4.153

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$4.598

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ChromeModa Solutions

Germany . 1,621 parts In-Stock

1+ parts

$4.666

100+ parts

$3.826

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1,621

$4.666

$3.826

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IDEA Electronic Components Group

UK . 757 parts In-Stock

1+ parts

$4.666

100+ parts

-

1k+ parts

$4.199

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757

$4.666

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$4.199

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AZTECH Wire

Italy . 665 parts In-Stock

1+ parts

$5.645

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665

$5.645

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One Stop Electronics

USA . 1,467 parts In-Stock

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$21.000

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1,467

$21.000

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Corphita

USA . 3,998 parts In-Stock

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3,998

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DigiPath Technology Company

USA . 1,530 parts In-Stock

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$4.207

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1,530

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$4.207

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Overview

Unlock the power of innovative technology with the TMS2764A-25JL EPROM by Texas Instruments. Crafted with precision and superior quality, this memory IC offers unparalleled performance and reliability for a wide range of applications. From industrial automation to consumer electronics, the TMS2764A-25JL provides fast access times and high memory density, ensuring seamless operation and data storage. Trust Texas Instruments to deliver cutting-edge solutions that elevate your projects to new heights. Experience the difference with the TMS2764A-25JL EPROM today.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed material ensures durability and protection for the EPROM, making it a reliable choice for long-term use.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V allows for compatibility with a wide range of systems, making this EPROM versatile and easy to integrate.

Organization: 8KX8

With an organization of 8KX8, this EPROM offers a high memory capacity and efficient storage arrangement, suitable for various applications that require ample memory space.

Technology: NMOS

Utilizing NMOS technology, this EPROM provides fast and efficient operation, enhancing performance and reliability in data storage and retrieval processes.

Maximum Access Time: 250 ns

With a maximum access time of 250 ns, this EPROM offers quick data access and retrieval, ideal for applications that require high-speed operation and responsiveness.

Technical Specifications

EPROM TMS2764A-25JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

JESD-30 Code:

R-GDIP-T28

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.84 mm

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

NMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

TMS2764A-25JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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