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5962-8766107XX

Texas Instruments

5962-8766107XX by Texas Instruments

The Texas Instruments 5962-8766107XX is a MILITARY-grade EPROM with 16KX8 organization, CMOS technology, and 131072-bit memory density. It operates at temperatures from -55 to 125 °C and has a max access time of 300 ns. Ideal for applications requiring reliable non-volatile memory in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,362 parts In-Stock

1+ parts

-

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4,362

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Vyrian

USA . 351 parts In-Stock

1+ parts

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351

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 334 parts In-Stock

1+ parts

$0.770

100+ parts

-

1k+ parts

-

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334

$0.770

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Northwest PG Solutions

USA . 367 parts In-Stock

1+ parts

$0.847

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-

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367

$0.847

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Parana Technologies

USA . 520 parts In-Stock

1+ parts

$2.384

100+ parts

-

1k+ parts

$2.883

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520

$2.384

-

$2.883

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DigiPath Technology Company

USA . 1,579 parts In-Stock

1+ parts

$2.625

100+ parts

$2.415

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-

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1,579

$2.625

$2.415

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ChromeModa Solutions

Germany . 3,380 parts In-Stock

1+ parts

$2.679

100+ parts

$2.197

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-

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3,380

$2.679

$2.197

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IDEA Electronic Components Group

UK . 719 parts In-Stock

1+ parts

$2.679

100+ parts

-

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$2.411

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719

$2.679

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$2.411

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One Stop Electronics

USA . 469 parts In-Stock

1+ parts

$7.000

100+ parts

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469

$7.000

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AZTECH Wire

Italy . 712 parts In-Stock

1+ parts

$7.769

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712

$7.769

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Semicontronic

India . 339 parts In-Stock

1+ parts

$26.000

100+ parts

$25.350

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$25.220

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339

$26.000

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$25.220

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West Coast Incorporated

USA . 5,068 parts In-Stock

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5,068

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Corphita

USA . 273 parts In-Stock

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273

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Overview

Upgrade your electronic devices with the high-quality 5962-8766107XX EPROM by Texas Instruments. Manufactured with precision and expertise, this military-grade UVPROM offers 16Kx8 memory density for optimal performance. With a package body material of ceramic and metal-sealed cofired, this product ensures durability and reliability in extreme conditions. Perfect for applications requiring fast access times and low power consumption, the 5962-8766107XX provides customers with exceptional value and efficiency. Experience the benefits of cutting-edge technology with Texas Instruments EPROM today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material combination provides excellent durability and resistance to temperature fluctuations, making the EPROM suitable for harsh environments.

Nominal Supply Voltage / Vsup (V): 5

The EPROM operates efficiently at a standard voltage, ensuring compatibility with most systems.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent functioning without needing to be synchronized with external signals, enhancing flexibility in usage.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the EPROM efficient and reliable.

Memory Width: 8

With a memory width of 8, the EPROM can store and retrieve data efficiently in parallel, optimizing performance.

Technical Specifications

EPROM 5962-8766107XX attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

300 ns

JESD-30 Code:

R-CDIP-T28

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16KX8

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Trade Compliance

5962-8766107XX Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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