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5962-8606304XX

Texas Instruments

5962-8606304XX by Texas Instruments

Texas Instruments' 5962-8606304XX EPROM operates asynchronously with a 32KX8 organization and 3-STATE output. It has a max operating temperature of 125°C, suitable for military-grade applications requiring a memory density of 262144 bit. With a programming voltage of 12.5V and common I/O type, it offers fast access time of 170 ns in parallel mode.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,489 parts In-Stock

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3,489

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Anansix

USA . 1,535 parts In-Stock

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1,535

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Digiode

USA . 1,498 parts In-Stock

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1,498

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Distributors (Availability)

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MARBEL Systems

Belgium . 1,513 parts In-Stock

1+ parts

$3.013

100+ parts

-

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$3.013

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Texas Native Microelectronics

USA . 1,504 parts In-Stock

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$3.463

100+ parts

$3.324

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$3.221

10k+ parts

$3.047

1,504

$3.463

$3.324

$3.221

$3.047

Parana Technologies

USA . 513 parts In-Stock

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$4.020

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-

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$4.484

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513

$4.020

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$4.484

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Kenton Components

USA . 92 parts In-Stock

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$4.156

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$3.657

92

$4.156

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$3.657

ChromeModa Solutions

Germany . 2,499 parts In-Stock

1+ parts

$4.517

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$3.704

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2,499

$4.517

$3.704

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IDEA Electronic Components Group

UK . 2,151 parts In-Stock

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$4.517

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$4.065

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$4.517

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$4.065

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AZTECH Wire

Italy . 545 parts In-Stock

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$8.573

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545

$8.573

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Qasali Group International

UK . 3,866 parts In-Stock

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$9.350

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$8.696

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$8.228

3,866

$9.350

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$8.696

$8.228

One Stop Electronics

USA . 865 parts In-Stock

1+ parts

$13.000

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865

$13.000

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Corphita

USA . 4,522 parts In-Stock

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Northwest PG Solutions

USA . 2,172 parts In-Stock

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Native Components

USA . 500 parts In-Stock

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500

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Supply Digital

USA . 468 parts In-Stock

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468

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DigiPath Technology Company

USA . 326 parts In-Stock

1+ parts

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$4.073

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326

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$4.073

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Overview

Experience unparalleled quality and reliability with the 5962-8606304XX EPROM by Texas Instruments. With a reputation for excellence, Texas Instruments delivers cutting-edge technology that meets the highest industry standards. This versatile EPROM is perfect for a wide range of applications, providing customers with exceptional value and performance. Trust Texas Instruments to deliver top-notch products that exceed expectations and elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material provides durability and protection for the EPROM, making it suitable for harsh operating conditions.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent access to each memory location, offering flexibility and efficiency in data retrieval.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this EPROM can withstand elevated temperatures without compromising performance.

Memory Density: 262144 bit

The high memory density of 262144 bits allows for storing large amounts of data in a compact EPROM, making it ideal for applications requiring extensive memory capacity.

Technology: CMOS

The CMOS technology used in this EPROM offers low power consumption and high speed performance, making it energy-efficient and fast in data processing.

Technical Specifications

EPROM 5962-8606304XX attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

170 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

JESD-609 Code:

e0

Length:

37.25 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

12.5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

5.72 mm

Maximum Standby Current:

.0003 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

5962-8606304XX Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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