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TMS27C256-17JL

Texas Instruments

TMS27C256-17JL by Texas Instruments

TMS27C256-17JL by Texas Instruments is a 32KX8 EPROM with 170 ns access time, operating at 5V. It features 3-STATE output and supports parallel mode. Ideal for commercial applications requiring reliable memory storage in a compact IN-LINE package.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Vyrian

USA . 5,036 parts In-Stock

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Digiode

USA . 607 parts In-Stock

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Microfarads

USA . 141 parts In-Stock

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Q Components

USA . 80 parts In-Stock

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Electronic Expediters

USA . 57 parts In-Stock

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ECAB

Sweden . 33 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 5 parts In-Stock

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EPE Components Inc.

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Bristol Electronics

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Parana Technologies

USA . 1,445 parts In-Stock

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$3.170

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$3.692

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ChromeModa Solutions

Germany . 6,504 parts In-Stock

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$3.562

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$2.921

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IDEA Electronic Components Group

UK . 825 parts In-Stock

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AZTECH Wire

Italy . 523 parts In-Stock

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$10.830

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One Stop Electronics

USA . 1,452 parts In-Stock

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Corphita

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DigiPath Technology Company

USA . 96 parts In-Stock

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A-Plus Industry Inc.

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Overview

Unlock the power of reliable data storage with the TMS27C256-17JL EPROM by Texas Instruments. Built with precision and quality in mind, this ceramic, glass-sealed package offers unmatched performance in a variety of applications. With a 32Kx8 organization and 3-STATE output characteristics, this EPROM ensures seamless operation for your projects. Trust in Texas Instruments to deliver cutting-edge technology that exceeds expectations. Elevate your designs with the TMS27C256-17JL EPROM today.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material ensures high durability and protection for the EPROM, making it suitable for rugged environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent operation without requiring synchronization, providing flexibility and ease of use.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources and makes integration into existing systems seamless.

Organization: 32KX8

The 32Kx8 organization offers a large memory capacity with efficient data organization and access, ideal for storing and retrieving data efficiently.

Technology: CMOS

Utilizing CMOS technology provides low power consumption, high speed performance, and reliable operation, making it a cost-effective and efficient choice.

Maximum Access Time: 170 ns

The maximum access time of 170 ns ensures quick data retrieval and processing, suitable for applications that require fast response times.

Technical Specifications

EPROM TMS27C256-17JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

170 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Length:

36.83 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C256-17JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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