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TMS27C32JE4

Texas Instruments

TMS27C32JE4 by Texas Instruments

TMS27C32JE4 by Texas Instruments is a 4KX8 EPROM with 3-STATE output, operating at 5V. It features a max access time of 250ns and memory density of 32768 bits. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,316 parts In-Stock

1+ parts

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4,316

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Vyrian

USA . 3,122 parts In-Stock

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3,122

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 848 parts In-Stock

1+ parts

$5.124

100+ parts

-

1k+ parts

$5.713

10k+ parts

-

848

$5.124

-

$5.713

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DigiPath Technology Company

USA . 2,210 parts In-Stock

1+ parts

$5.642

100+ parts

$5.191

1k+ parts

-

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2,210

$5.642

$5.191

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ChromeModa Solutions

Germany . 3,287 parts In-Stock

1+ parts

$5.757

100+ parts

$4.721

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-

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3,287

$5.757

$4.721

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IDEA Electronic Components Group

UK . 1,803 parts In-Stock

1+ parts

$5.757

100+ parts

-

1k+ parts

$5.181

10k+ parts

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1,803

$5.757

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$5.181

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AZTECH Wire

Italy . 685 parts In-Stock

1+ parts

$9.809

100+ parts

-

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685

$9.809

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One Stop Electronics

USA . 875 parts In-Stock

1+ parts

$17.000

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875

$17.000

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Corphita

USA . 2,536 parts In-Stock

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2,536

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Overview

Upgrade your electronics with the TMS27C32JE4 EPROM from Texas Instruments, a leader in semiconductor manufacturing. This rectangular package houses a high-quality, 4Kx8 memory chip designed for industrial-grade applications. With a wide operating temperature range and low standby current, this CMOS technology-based product offers reliability and efficiency. Trust Texas Instruments for cutting-edge solutions that elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Ceramic and metal-sealed package body materials provide durability and protection to the EPROM, making it suitable for harsh industrial environments.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent access to memory locations, increasing flexibility and efficiency in data retrieval.

Nominal Supply Voltage: 5V

Standard 5V supply voltage makes it compatible with many existing systems and easy to integrate.

No. of Terminals: 24

Sufficient number of terminals for connecting the EPROM to other components or systems.

Maximum Operating Temperature: 85 °C

High maximum operating temperature tolerance ensures reliability even in challenging temperature conditions.

Organization: 4KX8

Organized as 4Kx8, allowing for efficient storage and retrieval of data in a structured manner.

Output Characteristics: 3-STATE

3-state output characteristics provide flexibility in controlling output signals.

Width: 15.24 mm

Compact width size allows for space-efficient integration into various electronic devices.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the EPROM energy-efficient and reliable.

No. of Words: 4096 words

Large number of words allows for storing a significant amount of data in the EPROM.

Technical Specifications

EPROM TMS27C32JE4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T24

Length:

31.75 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C32JE4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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