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TMS27C210-300JL

Texas Instruments

TMS27C210-300JL by Texas Instruments

TMS27C210-300JL by Texas Instruments is a 64KX16 EPROM with 300 ns access time, 5V supply voltage, and 40 mA supply current. It is used in commercial applications requiring fast memory access and high data density.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,976 parts In-Stock

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3,976

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Digiode

USA . 593 parts In-Stock

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593

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,926 parts In-Stock

1+ parts

$5.037

100+ parts

-

1k+ parts

$5.597

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1,926

$5.037

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$5.597

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DigiPath Technology Company

USA . 2,293 parts In-Stock

1+ parts

$5.547

100+ parts

$5.103

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2,293

$5.547

$5.103

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IDEA Electronic Components Group

UK . 192 parts In-Stock

1+ parts

$5.660

100+ parts

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$5.094

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192

$5.660

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$5.094

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ChromeModa Solutions

Germany . 135 parts In-Stock

1+ parts

$5.660

100+ parts

$4.641

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135

$5.660

$4.641

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AZTECH Wire

Italy . 503 parts In-Stock

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$7.031

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503

$7.031

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One Stop Electronics

USA . 586 parts In-Stock

1+ parts

$27.000

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586

$27.000

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Corphita

USA . 577 parts In-Stock

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Overview

Unlock the power of reliable data storage with the TMS27C210-300JL by Texas Instruments, a top-tier EPROM solution designed for seamless integration and high performance. Texas Instruments, a renowned manufacturer, ensures superior quality and durability in every product, making this EPROM perfect for a wide range of applications. Experience the convenience of common input/output type, 3-state output characteristics, and a fast access time of 300 ns. Trust in Texas Instruments to deliver cutting-edge technology and value, providing you with the competitive edge you need. Upgrade your systems today with the TMS27C210-300JL and discover the difference quality makes.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides excellent protection for the internal components, ensuring durability and reliability.

Operating Mode: ASYNCHRONOUS

Allows for independent and self-contained operation without the need for external timing signals.

Nominal Supply Voltage / Vsup (V): 5

Operates at a common and easily accessible supply voltage, suitable for a wide range of applications.

No. of Terminals: 40

Offers ample connectivity options for interfacing with other components or systems.

Organization: 64KX16

Provides a high storage capacity with a wide data width, suitable for storing and retrieving large amounts of data quickly.

Technology: CMOS

Utilizes low power consumption and allows for high-speed operation, making it efficient and reliable.

Maximum Access Time: 300 ns

Ensures fast and efficient data access, crucial for time-sensitive applications.

Technical Specifications

EPROM TMS27C210-300JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

300 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T40

Length:

52.07 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

40

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX16

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP40,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

40 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C210-300JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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