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M27C512-15F1

STMicroelectronics

M27C512-15F1 by STMicroelectronics

M27C512-15F1 by STMicroelectronics is a 64KX8 EPROM with 150 ns access time, operating at 5V. It features a CMOS technology, 3-STATE output, and through-hole terminal form. Commonly used in commercial applications requiring non-volatile memory storage with a capacity of 524288 bits.

Median Price

$5.000

Lifecycle Status

Suppliers In-Stock

53

In-Stock Inventory

1k+

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Freelance Electronics

USA . 23 parts In-Stock

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$2.709

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$2.844

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$2.682

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DF Sales Co.

USA . 639 parts In-Stock

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Nova Conductors

Japan . 34 parts In-Stock

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Forefront Electronics and Design

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Component Electronics Inc.

Canada . 42 parts In-Stock

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Voyager Components

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TEDSS.com

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Vyrian

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Flex Direct, LLC

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LIBRA Elektronik GmbH

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Component Sense

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Fibra_Brandt Electronic GMBH

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Ampacity Inc.

Singapore . 404 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$3.755

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$3.755

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Aranea Global

USA . 2,000 parts In-Stock

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$4.387

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$4.212

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Continental Prestige Electronics

USA . 4,010 parts In-Stock

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$4.477

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$4.387

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Argo Parts USA

USA . 3,886 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,000 parts In-Stock

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$4.524

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Corohmni

South Africa . 55 parts In-Stock

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Modulus Dynamics

Lithuania . 900 parts In-Stock

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$4.969

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$4.920

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$4.771

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$4.969

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$4.771

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IDEA Electronic Components Group

UK . 1,300 parts In-Stock

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$5.211

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$4.690

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MKK Technologies

India . 790 parts In-Stock

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$9.799

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DigiPath Technology Company

USA . 790 parts In-Stock

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$9.799

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AZTECH Wire

Italy . 525 parts In-Stock

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$11.477

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Semicontronic

India . 1,368 parts In-Stock

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$16.000

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$15.600

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$15.520

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Kepictronics

USA . 42,221 parts In-Stock

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Lixinc

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Perfect Parts

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Germany . 2,340 parts In-Stock

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Parana Technologies

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Overview

Unlock endless possibilities with the STMicroelectronics M27C512-15F1 EPROM. Manufactured with precision and excellence, this innovative memory device offers a reliable solution for a wide range of applications. From automotive to industrial automation, experience seamless performance and unparalleled value with the M27C512-15F1. Trust in STMicroelectronics for quality, efficiency, and cutting-edge technology that exceeds expectations. Elevate your projects with the best - choose the M27C512-15F1 EPROM today.

Feature Benefit Bullets

Package Body Material: CERAMIC

The ceramic body provides excellent durability and protection for the EPROM, making it ideal for rugged environments.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into existing circuit designs, maximizing space efficiency.

Operating Mode: ASYNCHRONOUS

The asynchronous operation enables fast and independent access to the memory cells, improving overall performance.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage ensures stable and reliable power delivery to the EPROM, preventing data loss or corruption.

Power Supplies (V): 5

The consistent 5V power supply enhances the EPROM's overall performance and reliability.

No. of Terminals: 28

The 28 terminals provide ample connectivity options for external devices, enhancing versatility and compatibility.

Package Style (Meter): IN-LINE

The in-line package style simplifies installation and maintenance, making it user-friendly for technicians.

Maximum Operating Temperature: 70 °C

The EPROM can operate efficiently in high-temperature environments, ensuring data integrity and longevity.

Organization: 64KX8

The 64Kx8 organization optimizes memory storage capacity and access speed, ideal for handling complex data processing tasks.

Output Characteristics: 3-STATE

The 3-state output characteristics enable multiple devices to share the same bus, enhancing communication efficiency.

Minimum Operating Temperature: 0 °C

The EPROM can function effectively in low-temperature settings, making it suitable for a wide range of operating conditions.

Terminal Finish: TIN LEAD

The tin-lead finish protects the terminals from corrosion and ensures reliable electrical connections, enhancing the EPROM's durability.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and installation, accommodating various layout requirements.

Maximum Seated Height: 5.72 mm

The low seated height minimizes interference with surrounding components, improving overall system integration.

Width: 15.24 mm

The compact width of the EPROM allows for space-efficient PCB layout, maximizing design flexibility and optimization.

Minimum Supply Voltage (Vsup): 4.5 V

The 4.5V minimum supply voltage ensures the EPROM remains operational even under fluctuating voltage conditions.

Length: 36.92 mm

The length of the EPROM is optimized for space-saving designs, providing a balance between size and performance.

Temperature Grade: COMMERCIAL

The commercial-grade temperature rating ensures reliable operation in standard operating conditions, suitable for most applications.

Technology: CMOS

The CMOS technology used in the EPROM enhances energy efficiency and reduces power consumption, prolonging battery life in portable devices.

Parallel or Serial: PARALLEL

The parallel interface enables simultaneous data transfer, increasing throughput and reducing latency in data-intensive applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies soldering and PCB assembly, ensuring secure and reliable connections for long-term use.

Maximum Supply Current: 30 mA

The 30mA maximum supply current supports the EPROM's operation under load, maintaining reliable performance in demanding applications.

No. of Words: 65536 words

The 65536-word capacity provides ample storage for data-intensive applications, ensuring efficient data processing and retrieval.

Memory Width: 8

The 8-bit memory width facilitates fast data access and manipulation, enabling quick and efficient data processing tasks.

Terminal Pitch: 2.54 mm

The 2.54mm terminal pitch allows for easy connection to standard breadboards and PCBs, enhancing compatibility and ease of use.

No. of Words Code: 64K

The 64K word code simplifies memory addressing and management, improving data organization and access efficiency.

Maximum Supply Voltage (Vsup): 5.5 V

The 5.5V maximum supply voltage provides a safety margin for voltage spikes, protecting the EPROM from damage and ensuring long-term reliability.

Memory Density: 524288 bit

The high memory density offers ample storage capacity for large datasets, enabling efficient data handling and processing in complex applications.

Memory IC Type: UVPROM

The UVPROM technology ensures reliable data retention and non-volatile storage, safeguarding critical information against power loss or disruptions.

Maximum Standby Current: 0.0001 Amp

The ultra-low standby current consumption prolongs battery life and reduces power usage, making the EPROM energy-efficient and cost-effective.

Maximum Access Time: 150 ns

The 150ns maximum access time ensures fast data retrieval and processing, enhancing the EPROM's overall performance and responsiveness.

Technical Specifications

EPROM M27C512-15F1 attributes and parameters. Explore more EPROM devices from STMicroelectronics

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

JESD-609 Code:

e0

Length:

36.92 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.72 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M27C512-15F1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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