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M27C1001-10F1X

STMicroelectronics

M27C1001-10F1X by STMicroelectronics

STMicroelectronics' M27C1001-10F1X is a 128Kx8 EPROM with 100ns access time, operating at 5V. It features asynchronous mode and 3-state output, suitable for commercial temperature grade applications. The memory density is 1048576 bits with parallel interface and through-hole terminal form.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,308 parts In-Stock

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Anansix

USA . 1,971 parts In-Stock

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Vyrian

USA . 409 parts In-Stock

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409

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,506 parts In-Stock

1+ parts

$2.450

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-

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2,506

$2.450

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Corohmni

South Africa . 288 parts In-Stock

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$2.938

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288

$2.938

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IDEA Electronic Components Group

UK . 713 parts In-Stock

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$3.599

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$3.239

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713

$3.599

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$3.239

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MKK Technologies

India . 1,153 parts In-Stock

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$6.768

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1,153

$6.768

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DigiPath Technology Company

USA . 1,153 parts In-Stock

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$6.768

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$6.768

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AZTECH Wire

Italy . 630 parts In-Stock

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$13.969

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630

$13.969

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Semicontronic

India . 394 parts In-Stock

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$14.000

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$13.650

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$13.580

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394

$14.000

$13.650

$13.580

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Ampacity Inc.

Singapore . 1,321 parts In-Stock

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$23.000

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Corphita

USA . 3,295 parts In-Stock

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Continental Prestige Electronics

USA . 1,324 parts In-Stock

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Argo Parts USA

USA . 264 parts In-Stock

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Parana Technologies

USA . 109 parts In-Stock

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$4.303

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Bastille Electronics

Australia . 42 parts In-Stock

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Overview

Unlock the power of high-quality EPROM technology with the M27C1001-10F1X by STMicroelectronics. Featuring a durable ceramic, glass-sealed package and a 128KX8 organization, this memory IC offers reliability and performance like no other. Ideal for a wide range of applications, from automotive to industrial control systems, this product provides customers with a value-packed solution that guarantees seamless operation and exceptional functionality. Experience the advantages of STMicroelectronics' cutting-edge technology and elevate your projects to new heights with the M27C1001-10F1X.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed material ensures durability and protection for the EPROM chip, making it a reliable choice for long-term use.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into existing circuit designs and ensures compatibility with standard sockets.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode provides flexibility in data retrieval and processing, making this EPROM suitable for a variety of applications.

Input/Output Type: COMMON

The common input/output type simplifies connectivity and allows for easy interfacing with other components in a system.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with most electronic systems, making this EPROM a versatile choice.

Power Supplies (V): 5

The 5V power supply supports stable and reliable operation of the EPROM chip, contributing to consistent performance.

No. of Terminals: 32

The 32 terminals provide ample connectivity options, allowing for versatile integration into different circuit layouts.

Package Style (Meter): IN-LINE, WINDOW

The in-line, window package style offers easy visibility of the EPROM chip and facilitates straightforward installation and maintenance.

Maximum Operating Temperature: 70 °C

The EPROM chip can operate effectively in a wide range of temperatures up to 70°C, making it suitable for diverse environmental conditions.

Organization: 128KX8

The 128KX8 organization provides a high memory capacity and efficient data storage, ideal for applications requiring large amounts of information.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for multiple output options, enhancing flexibility and enabling customization in data transmission.

Minimum Operating Temperature: 0 °C

The EPROM chip can operate reliably in temperatures as low as 0°C, ensuring functionality in a variety of environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers corrosion resistance and reliable contact, ensuring long-term performance and durability.

Terminal Position: DUAL

The dual terminal position provides flexibility in installation and facilitates secure connections in the circuit layout.

Maximum Seated Height: 5.97 mm

The maximum seated height of 5.97mm allows for compact integration of the EPROM chip into space-constrained designs.

Width: 15.24 mm

The width of 15.24mm offers a compact form factor, making this EPROM chip suitable for applications with limited space.

Minimum Supply Voltage (Vsup): 4.5 V

The minimum supply voltage requirement of 4.5V ensures compatibility with a wide range of power sources, enhancing versatility.

Length: 41.885 mm

The length of 41.885mm offers a balance between compactness and functionality, making this EPROM chip suitable for various applications.

Temperature Grade: COMMERCIAL

The commercial temperature grade indicates that the EPROM chip meets industry standards for performance and reliability in commercial applications.

Technology: CMOS

The CMOS technology offers low power consumption and fast operation, making this EPROM chip energy-efficient and responsive.

Parallel or Serial: PARALLEL

The parallel data transfer mode allows for high-speed communication and efficient data processing, making this EPROM chip suitable for demanding applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections and facilitates easy installation on circuit boards, ensuring reliable performance.

Maximum Supply Current: 30 mA

The maximum supply current of 30mA ensures stable operation of the EPROM chip, contributing to consistent performance and reliability.

No. of Words: 131072 words

The high number of words accommodated by the EPROM chip allows for extensive data storage and retrieval, making it suitable for complex applications.

Memory Width: 8

The memory width of 8 bits provides a high data capacity and supports efficient data processing, making this EPROM chip ideal for demanding tasks.

Terminal Pitch: 2.54 mm

The terminal pitch of 2.54mm offers compatibility with standard connectors and allows for easy integration into circuit designs.

No. of Words Code: 128K

The 128K words code indicates a large memory capacity, making this EPROM chip suitable for applications requiring extensive data storage.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V provides a safety margin for power fluctuations, ensuring stable operation of the EPROM chip.

Memory Density: 1048576 bit

The high memory density of 1048576 bits allows for extensive data storage and efficient retrieval, making this EPROM chip suitable for data-intensive applications.

Memory IC Type: UVPROM

The UVPROM memory IC type offers reliable and non-volatile data storage, ensuring data integrity and longevity of stored information.

Maximum Standby Current: 0.0001 Amp

The low maximum standby current of 0.0001 Amp minimizes power consumption during idle periods, contributing to energy efficiency.

Maximum Access Time: 100 ns

The maximum access time of 100ns ensures fast data retrieval and processing, making this EPROM chip suitable for high-performance applications.

Technical Specifications

EPROM M27C1001-10F1X attributes and parameters. Explore more EPROM devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

JESD-609 Code:

e3

Length:

41.885 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.97 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M27C1001-10F1X Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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