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TMS27C210A-150JL

Texas Instruments

TMS27C210A-150JL by Texas Instruments

TMS27C210A-150JL by Texas Instruments is a 64KX16 EPROM with 150 ns access time, 3-STATE output, and CMOS technology. It operates at 5V with a supply current of 30mA. Commonly used in commercial applications requiring fast memory access and high data density.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,873 parts In-Stock

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8,873

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Digiode

USA . 2,027 parts In-Stock

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2,027

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Distributors (Availability)

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Parana Technologies

USA . 1,636 parts In-Stock

1+ parts

$3.014

100+ parts

-

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$3.523

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1,636

$3.014

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$3.523

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DigiPath Technology Company

USA . 824 parts In-Stock

1+ parts

$3.318

100+ parts

$3.053

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824

$3.318

$3.053

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ChromeModa Solutions

Germany . 6,446 parts In-Stock

1+ parts

$3.386

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$2.777

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6,446

$3.386

$2.777

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IDEA Electronic Components Group

UK . 914 parts In-Stock

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$3.386

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$3.047

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914

$3.386

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$3.047

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AZTECH Wire

Italy . 362 parts In-Stock

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$11.823

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362

$11.823

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One Stop Electronics

USA . 350 parts In-Stock

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$18.000

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350

$18.000

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Corphita

USA . 283 parts In-Stock

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Overview

Unlock the power of advanced memory storage with the TMS27C210A-150JL EPROM by Texas Instruments. Crafted with precision and expertise, this ceramic, glass-sealed package offers unparalleled reliability and performance for a wide range of applications. Whether you're in need of secure data storage or high-speed data transfer, this EPROM delivers exceptional value with its 64KX16 organization and 3-STATE output characteristics. Experience the benefits of cutting-edge technology with Texas Instruments' TMS27C210A-150JL EPROM.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed material provides durability and protection to the EPROM, making it resistant to environmental factors such as moisture and temperature changes.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V ensures compatibility with a wide range of electronic devices, making it a versatile choice for various applications.

Organization: 64KX16

With an organization of 64KX16, the EPROM offers a large memory storage capacity and efficient data retrieval, making it suitable for storing and accessing a significant amount of information.

Technology: CMOS

Utilizing CMOS technology results in low power consumption and high-speed operation, making the EPROM energy-efficient and ideal for applications requiring fast data access.

Maximum Access Time: 150 ns

The quick access time of 150 ns ensures rapid data retrieval, enhancing the overall performance of the EPROM and enabling swift processing of information.

Technical Specifications

EPROM TMS27C210A-150JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T40

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

40

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX16

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP40,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C210A-150JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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