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TMS27C010A-12JE

Texas Instruments

TMS27C010A-12JE by Texas Instruments

TMS27C010A-12JE by Texas Instruments is a 128KX8 EPROM with 120 ns access time, 5V supply voltage, and 32 terminals. It is used in industrial applications for storing data in parallel format with a memory density of 1048576 bit.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,131 parts In-Stock

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Digiode

USA . 994 parts In-Stock

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Electronics Depot

USA . 11 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,892 parts In-Stock

1+ parts

$4.260

100+ parts

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$4.691

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$4.260

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DigiPath Technology Company

USA . 1,576 parts In-Stock

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$4.690

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$4.315

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$4.690

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ChromeModa Solutions

Germany . 3,752 parts In-Stock

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$4.786

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$3.925

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$3.925

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IDEA Electronic Components Group

UK . 2,259 parts In-Stock

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$4.786

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$4.307

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2,259

$4.786

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$4.307

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AZTECH Wire

Italy . 221 parts In-Stock

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$9.187

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$9.187

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One Stop Electronics

USA . 531 parts In-Stock

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$15.000

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$15.000

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Corphita

USA . 1,448 parts In-Stock

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Assy Fe

Spain . 5 parts In-Stock

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Overview

Experience the exceptional quality and reliability of Texas Instruments with the TMS27C010A-12JE EPROM. This versatile memory device offers a wide range of applications in various industries, providing customers with high-performance and efficiency. With Texas Instruments' cutting-edge technology, you can trust that this product will deliver superior results in your projects. Explore the benefits of this EPROM today and unlock the potential for seamless operation and enhanced performance in your system.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material provides excellent durability and protection for the EPROM, ensuring reliability in various operating conditions.

Memory IC Type: UVPROM

The use of UVPROM technology offers a reliable and non-volatile memory solution, making the EPROM suitable for applications requiring secure data storage.

Maximum Operating Temperature: 85 °C

The EPROM can withstand high temperatures of up to 85°C, making it suitable for industrial applications where elevated temperatures may be present.

Memory Density: 1048576 bit

With a high memory density of over 1 million bits, this EPROM provides ample storage capacity for storing large amounts of data efficiently.

Maximum Access Time: 120 ns

The fast access time of 120 nanoseconds ensures quick read and write operations, making the EPROM ideal for applications requiring high-speed data processing.

Technical Specifications

EPROM TMS27C010A-12JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Length:

41.91 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C010A-12JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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