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TMS27C512-12JE4

Texas Instruments

TMS27C512-12JE4 by Texas Instruments

TMS27C512-12JE4 by Texas Instruments is a 64KX8 EPROM with 120 ns access time, operating at 5V. It features a CMOS technology, 3-STATE output, and through-hole terminal form. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,170 parts In-Stock

1+ parts

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4,170

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Vyrian

USA . 1,989 parts In-Stock

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1,989

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,167 parts In-Stock

1+ parts

$4.252

100+ parts

-

1k+ parts

$4.686

10k+ parts

-

1,167

$4.252

-

$4.686

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DigiPath Technology Company

USA . 1,115 parts In-Stock

1+ parts

$4.682

100+ parts

$4.308

1k+ parts

-

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1,115

$4.682

$4.308

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ChromeModa Solutions

Germany . 1,344 parts In-Stock

1+ parts

$4.778

100+ parts

$3.918

1k+ parts

-

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1,344

$4.778

$3.918

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IDEA Electronic Components Group

UK . 938 parts In-Stock

1+ parts

$4.778

100+ parts

-

1k+ parts

$4.300

10k+ parts

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938

$4.778

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$4.300

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AZTECH Wire

Italy . 708 parts In-Stock

1+ parts

$16.462

100+ parts

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708

$16.462

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One Stop Electronics

USA . 1,273 parts In-Stock

1+ parts

$21.000

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1,273

$21.000

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Corphita

USA . 1,315 parts In-Stock

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1,315

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Overview

Unlock the power of reliable data storage with the TMS27C512-12JE4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and performance in every product. This EPROM is perfect for various applications, offering customers unrivaled value, benefits, and advantages. Say goodbye to worries about data loss or corruption with this innovative solution. Trust Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material combination provides durability and reliability for the EPROM, making it suitable for industrial applications where the component may be subjected to harsh conditions.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility in timing and control, making it easier to integrate the EPROM into various systems.

Nominal Supply Voltage / Vsup (V): 5

The standard 5V supply voltage ensures compatibility with a wide range of systems and makes integration straightforward.

Organization: 64KX8

The 64KX8 organization means that this EPROM has a capacity of 64 kilobits with an 8-bit data output, offering sufficient memory for many applications.

Memory Density: 524288 bit

With a high memory density of 524288 bits, this EPROM can store a significant amount of data, making it suitable for applications that require large memory capacities.

Maximum Access Time: 120 ns

The fast access time of 120 ns ensures quick retrieval of data stored in the EPROM, which is essential for high-performance systems.

Technical Specifications

EPROM TMS27C512-12JE4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C512-12JE4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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