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TMS27C256-15JE4

Texas Instruments

TMS27C256-15JE4 by Texas Instruments

TMS27C256-15JE4 by Texas Instruments is a 32KX8 EPROM with 150 ns access time, 3-STATE output, and operates at -40 to 85 °C. It is used in industrial applications for storing data securely due to its UVPROM memory technology and common I/O type.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,244 parts In-Stock

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8,244

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Digiode

USA . 2,739 parts In-Stock

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2,739

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,673 parts In-Stock

1+ parts

$4.920

100+ parts

-

1k+ parts

$5.452

10k+ parts

-

1,673

$4.920

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$5.452

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DigiPath Technology Company

USA . 555 parts In-Stock

1+ parts

$5.417

100+ parts

$4.984

1k+ parts

-

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555

$5.417

$4.984

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ChromeModa Solutions

Germany . 3,792 parts In-Stock

1+ parts

$5.528

100+ parts

$4.533

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-

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3,792

$5.528

$4.533

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IDEA Electronic Components Group

UK . 1,143 parts In-Stock

1+ parts

$5.528

100+ parts

-

1k+ parts

$4.975

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1,143

$5.528

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$4.975

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AZTECH Wire

Italy . 835 parts In-Stock

1+ parts

$17.365

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835

$17.365

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One Stop Electronics

USA . 1,044 parts In-Stock

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$30.000

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1,044

$30.000

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Corphita

USA . 3,484 parts In-Stock

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3,484

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Overview

Unlock the power of reliable data storage with the TMS27C256-15JE4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and performance in every product they create. The TMS27C256-15JE4 EPROM is perfect for applications that require secure and fast memory access, providing customers with peace of mind knowing their data is stored safely. With a nominal supply voltage of 5V and an industrial temperature grade, this memory IC offers exceptional value and benefits for your electronic devices. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired body material provides durability and reliability, making this EPROM suitable for industrial applications where stability is important.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent operation, making it easier to integrate this EPROM into various systems.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with a wide range of systems and makes integration seamless.

No. of Terminals: 28

Having 28 terminals provides enough connectivity options for interfacing with other components, enhancing the versatility of this EPROM.

Memory Density: 262144 bit

With a high memory density of 262144 bits, this EPROM offers ample storage capacity for storing data or code, making it suitable for a variety of applications.

Technical Specifications

EPROM TMS27C256-15JE4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C256-15JE4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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