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TMS27C210A-200JL

Texas Instruments

TMS27C210A-200JL by Texas Instruments

TMS27C210A-200JL by Texas Instruments is a 64KX16 EPROM with 200 ns access time, 3-STATE output, and CMOS technology. It operates at 5V and has a memory density of 1048576 bit. Ideal for applications requiring fast data retrieval in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,942 parts In-Stock

1+ parts

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7,942

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Digiode

USA . 1,451 parts In-Stock

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1,451

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Q Components

USA . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,630 parts In-Stock

1+ parts

$4.056

100+ parts

-

1k+ parts

$4.519

10k+ parts

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1,630

$4.056

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$4.519

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DigiPath Technology Company

USA . 138 parts In-Stock

1+ parts

$4.466

100+ parts

$4.109

1k+ parts

-

10k+ parts

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138

$4.466

$4.109

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IDEA Electronic Components Group

UK . 1,668 parts In-Stock

1+ parts

$4.557

100+ parts

-

1k+ parts

$4.101

10k+ parts

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1,668

$4.557

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$4.101

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ChromeModa Solutions

Germany . 1,610 parts In-Stock

1+ parts

$4.557

100+ parts

$3.737

1k+ parts

-

10k+ parts

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1,610

$4.557

$3.737

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AZTECH Wire

Italy . 871 parts In-Stock

1+ parts

$14.476

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871

$14.476

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One Stop Electronics

USA . 556 parts In-Stock

1+ parts

$25.000

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556

$25.000

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Corphita

USA . 2,155 parts In-Stock

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2,155

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Overview

Unlock the power of advanced technology with the TMS27C210A-200JL by Texas Instruments! This high-quality EPROM offers unmatched reliability and performance, thanks to its innovative design and superior manufacturing standards. Ideal for a wide range of applications, this product provides customers with exceptional value and benefits, making it the perfect choice for any project that demands top-tier memory solutions. Upgrade your system with the TMS27C210A-200JL and experience the true potential of cutting-edge technology.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides durability and protection for the EPROM, making it suitable for industrial and harsh environments.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage ensures compatibility with standard electronic systems, making it easy to integrate this EPROM into existing setups.

Organization: 64KX16

With a 64Kx16 organization, this EPROM offers a high memory capacity and efficient data retrieval, making it ideal for storing large amounts of data.

Technology: CMOS

CMOS technology ensures low power consumption and high speed performance, making this EPROM energy efficient and reliable for various applications.

Maximum Access Time: 200 ns

The fast access time of 200 ns allows for quick data retrieval and processing, making this EPROM suitable for applications requiring speed and efficiency.

Technical Specifications

EPROM TMS27C210A-200JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T40

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

40

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX16

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP40,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C210A-200JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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