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TMS27C64-2JE

Texas Instruments

TMS27C64-2JE by Texas Instruments

TMS27C64-2JE by Texas Instruments is an 8KX8 EPROM with 65536 bit memory density. It operates at 5V, has a max access time of 200ns, and features a CMOS technology. Commonly used in industrial applications for storing data securely due to its 3-STATE output characteristics and parallel input/output type.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,487 parts In-Stock

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2,487

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Digiode

USA . 2,217 parts In-Stock

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2,217

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Q Components

USA . 7 parts In-Stock

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7

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 169 parts In-Stock

1+ parts

$3.020

100+ parts

-

1k+ parts

$3.529

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169

$3.020

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$3.529

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DigiPath Technology Company

USA . 2,253 parts In-Stock

1+ parts

$3.325

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2,253

$3.325

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ChromeModa Solutions

Germany . 4,026 parts In-Stock

1+ parts

$3.393

100+ parts

$2.782

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4,026

$3.393

$2.782

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IDEA Electronic Components Group

UK . 2,062 parts In-Stock

1+ parts

$3.393

100+ parts

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$3.054

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2,062

$3.393

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$3.054

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AZTECH Wire

Italy . 493 parts In-Stock

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$17.503

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$17.503

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One Stop Electronics

USA . 458 parts In-Stock

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$23.000

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458

$23.000

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Corphita

USA . 2,503 parts In-Stock

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Overview

Unlock the power of reliable data storage with the TMS27C64-2JE by Texas Instruments. Crafted with precision and quality, this EPROM memory chip offers unparalleled performance and versatility for a wide range of applications. Whether you're in need of secure data storage for industrial automation, automotive systems, or consumer electronics, this product delivers superior value and benefits. Trust Texas Instruments to provide cutting-edge technology that enhances your projects and exceeds your expectations. Upgrade to the TMS27C64-2JE and experience the difference in quality and reliability today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and protection for the EPROM, ensuring reliable performance even in harsh operating conditions.

Operating Mode: ASYNCHRONOUS

Allows for independent, non-simultaneous data access and storage, enhancing flexibility in the EPROM's operation.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage ensures compatibility with common power sources, making integration easier.

No. of Terminals: 28

Sufficient number of terminals for connectivity and interfacing with other components in the system.

Organization: 8KX8

Organized in an 8KX8 configuration, providing ample storage capacity for data and instructions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the EPROM energy-efficient and reliable.

Maximum Access Time: 200 ns

Fast access time ensures quick retrieval of data, contributing to efficient operation of the EPROM.

Technical Specifications

EPROM TMS27C64-2JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

12.5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C64-2JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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