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TMS2532-35JL

Texas Instruments

TMS2532-35JL by Texas Instruments

TMS2532-35JL by Texas Instruments is a 4KX8 EPROM with 3-STATE output, 32768 bit memory density, and 350 ns access time. It is commonly used in commercial applications requiring reliable non-volatile memory storage in a ceramic rectangular package with dual terminals.

Median Price

$18.200

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

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Bristol Electronics

USA . 13 parts In-Stock

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$16.800

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$15.456

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Forefront Electronics and Design

USA . 1 parts In-Stock

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$19.600

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Vyrian

USA . 6,226 parts In-Stock

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Digiode

USA . 4,898 parts In-Stock

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4,898

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Inland Empire Components Inc.

USA . 871 parts In-Stock

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Q Components

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 34 parts In-Stock

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Pegasus Components GmbH

Germany . 17 parts In-Stock

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Dan-Mar Components

USA . 13 parts In-Stock

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Lakeland Logistics Inc

USA . 9 parts In-Stock

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ComSIT Distribution GmbH

Germany . 8 parts In-Stock

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Electronic Expediters

USA . 5 parts In-Stock

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Parana Technologies

USA . 1,453 parts In-Stock

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$1.798

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$2.357

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$1.798

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ChromeModa Solutions

Germany . 1,709 parts In-Stock

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$2.020

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$1.656

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$2.020

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IDEA Electronic Components Group

UK . 606 parts In-Stock

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$2.020

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$1.818

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$2.020

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AZTECH Wire

Italy . 658 parts In-Stock

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$6.100

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$6.100

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One Stop Electronics

USA . 722 parts In-Stock

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$16.000

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Corphita

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DigiPath Technology Company

USA . 1,968 parts In-Stock

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$1.821

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Assy Fe

Spain . 57 parts In-Stock

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Perfect Parts

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Overview

Upgrade your electronic devices with the high-quality TMS2532-35JL EPROM from Texas Instruments. Designed to deliver reliable performance and durability, this product is perfect for a wide range of applications. With its advanced technology and commercial-grade temperature grade, you can trust this EPROM to meet your needs. Experience the value and benefits of Texas Instruments' superior engineering with the TMS2532-35JL EPROM - your solution to memory storage challenges.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent protection for the EPROM, ensuring durability and reliability in various operating conditions.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on a circuit board, optimizing the layout and design of the overall system.

No. of Terminals: 24

Having 24 terminals allows for versatility in connectivity options, enabling the EPROM to easily interface with other components in the system.

Package Style (Meter): IN-LINE

The in-line package style simplifies installation and maintenance processes, making it convenient for users to work with the EPROM.

Output Characteristics: 3-STATE

The 3-state output characteristic allows for multiple output states, providing flexibility in controlling the flow of data and signals within the system.

Memory Density: 32768 bit

With a high memory density of 32768 bits, this EPROM offers ample storage capacity for data, programs, and instructions, making it suitable for a wide range of applications.

Maximum Access Time: 350 ns

The fast maximum access time of 350 nanoseconds ensures quick data retrieval and processing, enhancing the overall performance of the EPROM.

Technical Specifications

EPROM TMS2532-35JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

350 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T24

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Sub-Category:

EPROMs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS2532-35JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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