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TMS27C510-17JE4

Texas Instruments

TMS27C510-17JE4 by Texas Instruments

TMS27C510-17JE4 by Texas Instruments is a 64KX8 EPROM with 170 ns access time, 3-STATE output, and operates at -40 to 85 °C. It is used in industrial applications for storing data securely with a memory density of 524288 bit.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,927 parts In-Stock

1+ parts

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4,927

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Vyrian

USA . 4,822 parts In-Stock

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4,822

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,164 parts In-Stock

1+ parts

$3.168

100+ parts

$294.234

1k+ parts

$2.852

10k+ parts

-

2,164

$3.168

$294.234

$2.852

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DigiPath Technology Company

USA . 2,089 parts In-Stock

1+ parts

$3.489

100+ parts

-

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2,089

$3.489

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ChromeModa Solutions

Germany . 6,433 parts In-Stock

1+ parts

$3.560

100+ parts

$2.919

1k+ parts

-

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6,433

$3.560

$2.919

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IDEA Electronic Components Group

UK . 313 parts In-Stock

1+ parts

$3.560

100+ parts

-

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$3.204

10k+ parts

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313

$3.560

-

$3.204

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AZTECH Wire

Italy . 308 parts In-Stock

1+ parts

$11.330

100+ parts

-

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308

$11.330

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One Stop Electronics

USA . 183 parts In-Stock

1+ parts

$14.000

100+ parts

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183

$14.000

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Corphita

USA . 2,455 parts In-Stock

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2,455

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Overview

Experience superior quality and reliability with the TMS27C510-17JE4 EPROM by Texas Instruments. This innovative product is perfect for a wide range of applications, offering customers unmatched value and benefits. With Texas Instruments' reputation for excellence in manufacturing, you can trust that this EPROM will deliver exceptional performance and efficiency. Upgrade your projects with the TMS27C510-17JE4 and unlock endless possibilities in the world of technology.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent durability and protection for the EPROM chip, ensuring a longer lifespan and more reliable performance.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage is a common and stable power source for electronic devices, making this EPROM chip compatible with a wide range of systems.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to memory locations, making this EPROM chip suitable for various applications that require non-simultaneous data retrieval.

Memory Density: 524288 bit

With a high memory density of 524288 bits, this EPROM chip offers ample storage capacity for data-intensive tasks and applications.

Maximum Access Time: 170 ns

The fast access time of 170 nanoseconds ensures quick data retrieval and efficient operation of the EPROM chip, making it suitable for high-performance applications.

Technical Specifications

EPROM TMS27C510-17JE4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

170 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T32

Length:

41.91 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C510-17JE4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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