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TMX27C512-45JL

Texas Instruments

TMX27C512-45JL by Texas Instruments

TMX27C512-45JL by Texas Instruments is a 64KX8 EPROM with 5V supply, 450 ns access time, and 3-STATE output. It is used in commercial applications requiring fast parallel memory access in a ceramic package with through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,537 parts In-Stock

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8,537

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Digiode

USA . 2,132 parts In-Stock

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2,132

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Distributors (Availability)

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Parana Technologies

USA . 2,272 parts In-Stock

1+ parts

$5.084

100+ parts

-

1k+ parts

$5.660

10k+ parts

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2,272

$5.084

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$5.660

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DigiPath Technology Company

USA . 1,467 parts In-Stock

1+ parts

$5.598

100+ parts

$5.150

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1,467

$5.598

$5.150

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ChromeModa Solutions

Germany . 6,555 parts In-Stock

1+ parts

$5.712

100+ parts

$4.684

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6,555

$5.712

$4.684

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IDEA Electronic Components Group

UK . 1,523 parts In-Stock

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$5.712

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$5.141

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1,523

$5.712

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$5.141

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One Stop Electronics

USA . 1,041 parts In-Stock

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$12.000

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1,041

$12.000

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AZTECH Wire

Italy . 224 parts In-Stock

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$13.312

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224

$13.312

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Corphita

USA . 868 parts In-Stock

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Overview

Unlock the power of reliable data storage with the TMX27C512-45JL by Texas Instruments. Crafted with precision and quality, this EPROM offers unparalleled performance for a variety of applications. With a 64KX8 organization and 3-STATE output characteristics, this CMOS technology-based memory device provides seamless operation in parallel mode. Ideal for commercial grade use, this UVPROM memory chip boasts a 450 ns maximum access time, ensuring fast and efficient data retrieval. Trust in Texas Instruments to deliver exceptional value and unmatched benefits with the TMX27C512-45JL.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides excellent protection for the EPROM, ensuring its longevity and reliability even in harsh environments.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for fast and flexible access to the memory, making it suitable for a wide range of applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes this EPROM compatible with many existing systems and easy to integrate.

Memory Density: 524288 bit

With a high memory density, this EPROM can store a large amount of data efficiently, making it ideal for applications requiring a lot of storage space.

Maximum Access Time: 450 ns

The fast access time of 450 ns ensures quick and efficient read/write operations, improving overall system performance.

Technical Specifications

EPROM TMX27C512-45JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

450 ns

JESD-30 Code:

R-GDIP-T28

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.84 mm

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

TMX27C512-45JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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