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TMX27C512-3JL

Texas Instruments

TMX27C512-3JL by Texas Instruments

TMX27C512-3JL by Texas Instruments is a 64KX8 EPROM with 5V supply, 300 ns access time, and 524288 bit memory density. It operates in asynchronous mode and has a package style of IN-LINE. Ideal for commercial applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,600 parts In-Stock

1+ parts

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4,600

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Vyrian

USA . 2,398 parts In-Stock

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2,398

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 497 parts In-Stock

1+ parts

$2.893

100+ parts

-

1k+ parts

$3.387

10k+ parts

-

497

$2.893

-

$3.387

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IDEA Electronic Components Group

UK . 2,015 parts In-Stock

1+ parts

$3.251

100+ parts

-

1k+ parts

$2.926

10k+ parts

-

2,015

$3.251

-

$2.926

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ChromeModa Solutions

Germany . 179 parts In-Stock

1+ parts

$3.251

100+ parts

$2.666

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-

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179

$3.251

$2.666

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One Stop Electronics

USA . 177 parts In-Stock

1+ parts

$12.000

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-

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177

$12.000

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AZTECH Wire

Italy . 492 parts In-Stock

1+ parts

$18.753

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492

$18.753

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DigiPath Technology Company

USA . 1,734 parts In-Stock

1+ parts

-

100+ parts

$2.931

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1,734

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$2.931

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Corphita

USA . 1,329 parts In-Stock

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1,329

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Overview

Upgrade your electronics with the TMX27C512-3JL EPROM from Texas Instruments, a trusted manufacturer known for top-quality components. Ideal for a wide range of applications, this versatile chip offers reliable performance and durability, ensuring seamless operation in various devices. With its 64KX8 organization, 3-STATE output characteristics, and 300 ns maximum access time, this UVPROM memory IC provides value and benefits that will enhance your projects. Trust Texas Instruments for cutting-edge technology and superior products to take your designs to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Ceramic and glass-sealed package provides durability and protection for the EPROM, ensuring long-term reliability.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent access to memory locations, providing flexibility and efficient data retrieval.

Nominal Supply Voltage / Vsup (V): 5

Operates at a common and stable voltage level of 5V, making it compatible with most systems and easy to integrate.

Memory Density: 524288 bit

With a high memory density, this EPROM can store a large amount of data in a compact size, making it ideal for applications requiring extensive storage capabilities.

Maximum Access Time: 300 ns

Fast access time ensures quick retrieval of data, improving overall system performance and efficiency.

Technical Specifications

EPROM TMX27C512-3JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

300 ns

JESD-30 Code:

R-GDIP-T28

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.84 mm

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

TMX27C512-3JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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