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TMX27C512-2JL

Texas Instruments

TMX27C512-2JL by Texas Instruments

TMX27C512-2JL by Texas Instruments is a 64KX8 EPROM with 5V supply voltage, operating in asynchronous mode. It features 3-STATE output and offers 524288 bits memory density. Ideal for commercial applications requiring fast access time of 200 ns in a rectangular ceramic package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,144 parts In-Stock

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6,144

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Digiode

USA . 322 parts In-Stock

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322

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Distributors (Availability)

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Parana Technologies

USA . 1,164 parts In-Stock

1+ parts

$4.733

100+ parts

-

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$5.230

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1,164

$4.733

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$5.230

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DigiPath Technology Company

USA . 1,160 parts In-Stock

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$5.212

100+ parts

$4.795

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1,160

$5.212

$4.795

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ChromeModa Solutions

Germany . 3,770 parts In-Stock

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$5.318

100+ parts

$4.361

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3,770

$5.318

$4.361

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IDEA Electronic Components Group

UK . 454 parts In-Stock

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$5.318

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$4.786

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454

$5.318

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$4.786

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One Stop Electronics

USA . 1,296 parts In-Stock

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$11.000

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1,296

$11.000

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AZTECH Wire

Italy . 446 parts In-Stock

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$18.153

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446

$18.153

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Corphita

USA . 2,358 parts In-Stock

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Overview

Unlock the power of innovation with the TMX27C512-2JL EPROM from Texas Instruments. Crafted with precision using high-quality materials, this versatile memory solution offers unmatched reliability and performance. Ideal for a wide range of applications, the TMX27C512-2JL is designed to meet your needs with ease. Experience the value of cutting-edge technology and elevate your projects to new heights with this exceptional product. Choose Texas Instruments for excellence in every detail.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material ensures durability and provides protection to the internal components, making the product reliable for long-term use.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent functioning of the EPROM, making it versatile and suitable for various applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes it compatible with a wide range of systems and easy to integrate.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, the EPROM can perform efficiently even in challenging environmental conditions.

Organization: 64KX8

Organized as 64KX8, this EPROM provides a large storage capacity and efficient data access for various applications.

Output Characteristics: 3-STATE

The 3-STATE output feature allows for multiple devices to share the same output line without interference, enhancing the system's overall performance.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high speed operation, making it energy-efficient and reliable.

Technical Specifications

EPROM TMX27C512-2JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

JESD-30 Code:

R-GDIP-T28

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.84 mm

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

TMX27C512-2JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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