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TMS87C257JL

Texas Instruments

TMS87C257JL by Texas Instruments

TMS87C257JL by Texas Instruments is a 32KX8 EPROM with 3-STATE output, operating at temperatures from 0 to 70 °C. It has a memory density of 262144 bit and requires a nominal voltage of 5V. Commonly used in commercial applications due to its CMOS technology and through-hole terminal form.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,204 parts In-Stock

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Digiode

USA . 903 parts In-Stock

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903

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Distributors (Availability)

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Parana Technologies

USA . 927 parts In-Stock

1+ parts

$5.186

100+ parts

-

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$5.789

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927

$5.186

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$5.789

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DigiPath Technology Company

USA . 2,282 parts In-Stock

1+ parts

$5.710

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$5.254

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2,282

$5.710

$5.254

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IDEA Electronic Components Group

UK . 2,097 parts In-Stock

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$5.827

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$5.244

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2,097

$5.827

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$5.244

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ChromeModa Solutions

Germany . 487 parts In-Stock

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$5.827

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$4.778

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487

$5.827

$4.778

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AZTECH Wire

Italy . 725 parts In-Stock

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$10.491

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725

$10.491

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One Stop Electronics

USA . 548 parts In-Stock

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$21.000

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548

$21.000

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Corphita

USA . 2,998 parts In-Stock

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Overview

Unlock the power of innovation with the TMS87C257JL by Texas Instruments, a high-quality EPROM that offers unrivaled reliability and performance. Designed by a trusted manufacturer, this versatile product is perfect for a wide range of applications. Experience seamless operation and enhanced efficiency with its advanced features. Trust in Texas Instruments to provide cutting-edge technology that exceeds expectations. Elevate your projects with the TMS87C257JL and discover the value it brings to your work.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides durability and resistance to high temperatures, making this EPROM suitable for harsh environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power supplies and makes integration into existing systems easier.

No. of Words: 32768 words

With a high number of words, this EPROM offers ample storage capacity for data and programs, making it suitable for a wide range of applications.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, leading to efficient operation and reliable performance.

Maximum Access Time: 250 ns

A fast maximum access time of 250 ns allows for quick read and write operations, enhancing the overall speed and responsiveness of the EPROM.

Technical Specifications

EPROM TMS87C257JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T28

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS87C257JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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