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TMS87C257-150JE

Texas Instruments

TMS87C257-150JE by Texas Instruments

TMS87C257-150JE by Texas Instruments is a 32KX8 EPROM with 3-STATE output, operating at -40 to 85 °C. It has a supply voltage of 4.75-5.25 V and max access time of 150 ns. Ideal for industrial applications requiring high memory density and parallel data transfer in a ceramic package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,704 parts In-Stock

1+ parts

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7,704

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Digiode

USA . 2,633 parts In-Stock

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2,633

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 992 parts In-Stock

1+ parts

$4.405

100+ parts

-

1k+ parts

$4.824

10k+ parts

-

992

$4.405

-

$4.824

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DigiPath Technology Company

USA . 27 parts In-Stock

1+ parts

$4.850

100+ parts

-

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27

$4.850

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ChromeModa Solutions

Germany . 4,361 parts In-Stock

1+ parts

$4.949

100+ parts

$4.058

1k+ parts

-

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4,361

$4.949

$4.058

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IDEA Electronic Components Group

UK . 866 parts In-Stock

1+ parts

$4.949

100+ parts

-

1k+ parts

$4.454

10k+ parts

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866

$4.949

-

$4.454

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AZTECH Wire

Italy . 523 parts In-Stock

1+ parts

$17.380

100+ parts

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523

$17.380

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One Stop Electronics

USA . 1,314 parts In-Stock

1+ parts

$30.000

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1,314

$30.000

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Corphita

USA . 1,583 parts In-Stock

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1,583

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Overview

Experience unparalleled quality and reliability with the TMS87C257-150JE EPROM by Texas Instruments. Designed with precision and expertise, this product offers seamless performance in a variety of applications. Whether you're in need of secure data storage or efficient memory solutions, this EPROM delivers exceptional value and benefits to meet your needs. Trust in Texas Instruments to provide top-notch technology that exceeds expectations and elevates your projects to new heights.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material provides durability and protection for the EPROM, making it suitable for industrial environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent operation and flexible timing control, enhancing the versatility of the EPROM.

Nominal Supply Voltage / Vsup (V): 5

With a nominal supply voltage of 5V, this EPROM is compatible with standard power sources, ensuring easy integration into existing systems.

Memory IC Type: UVPROM

The UVPROM technology used in this EPROM offers reliable and non-volatile memory storage, making it ideal for applications where data retention is crucial.

Maximum Access Time: 150 ns

The fast access time of 150 ns allows for quick data retrieval, reducing latency and improving overall system performance.

Technical Specifications

EPROM TMS87C257-150JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS87C257-150JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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