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M27C1001-15F1E

STMicroelectronics

M27C1001-15F1E by STMicroelectronics

M27C1001-15F1E by STMicroelectronics is a 128Kx8 UVPROM with a max access time of 150 ns, operating at 5V. It features a ceramic, metal-sealed package and operates asynchronously. Ideal for commercial applications requiring reliable data storage in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,400 parts In-Stock

1+ parts

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4,400

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Digiode

USA . 3,688 parts In-Stock

1+ parts

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3,688

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Anansix

USA . 2,564 parts In-Stock

1+ parts

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2,564

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,042 parts In-Stock

1+ parts

$4.581

100+ parts

-

1k+ parts

$4.123

10k+ parts

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1,042

$4.581

-

$4.123

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MKK Technologies

India . 600 parts In-Stock

1+ parts

$8.614

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600

$8.614

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DigiPath Technology Company

USA . 600 parts In-Stock

1+ parts

$8.614

100+ parts

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600

$8.614

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Corphita

USA . 3,348 parts In-Stock

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3,348

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Parana Technologies

USA . 724 parts In-Stock

1+ parts

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100+ parts

$5.477

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724

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$5.477

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Overview

Unlock endless possibilities with the M27C1001-15F1E EPROM from STMicroelectronics, a leader in semiconductor innovation. This robust memory solution combines superior quality with exceptional reliability, making it ideal for various applications—from consumer electronics to industrial automation. Experience enhanced performance and longevity, backed by ST's commitment to excellence, ensuring your projects thrive with cutting-edge technology and peace of mind.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package enhances durability and reliability, making this EPROM suitable for harsh environments.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space on PCB layouts, facilitating tight packing in electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation simplifies integration into systems, reducing design complexity and lowering latency for data retrieval.

Nominal Supply Voltage / Vsup: 5 V

Standard 5V operation ensures compatibility with most electronic circuits, making it easy to incorporate into existing designs.

No. of Terminals: 32

A sufficient number of terminals provides versatility for connections and allows for greater functionality in a compact package.

Package Style (Meter): IN-LINE

The in-line package style is commonly used, which facilitates easy handling and soldering in manufacturing processes.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C allows for reliable operation in standard environments, ensuring stability for consumer applications.

Organization: 128KX8

The 128Kx8 organization indicates significant storage capacity, enabling the storage of larger data sets while maintaining a compact form factor.

Minimum Operating Temperature: 0 °C

A minimum operating temperature of 0 °C ensures functionality in a wide range of environmental conditions, enhancing adaptability.

Terminal Position: DUAL

Dual terminal positions provide flexibility in design, allowing for better routing possibilities on PCBs.

Maximum Seated Height: 5.72 mm

The compact seated height enables easy integration into space-constrained designs without compromising performance.

Width: 15.24 mm

A width of 15.24 mm allows for an optimal footprint on the PCB, balancing performance and space requirements.

Minimum Supply Voltage: 4.5 V

The low minimum supply voltage facilitates flexibility in power management and reduces energy consumption.

Length: 41.885 mm

The length provides a suitable size for high-density applications, allowing for efficient design integration.

Temperature Grade: COMMERCIAL

Being rated for commercial temperature usage makes it ideal for consumer electronic products that do not require extreme specifications.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making it an excellent choice for battery-operated devices.

Parallel or Serial: PARALLEL

Parallel operation allows for faster data access, significantly improving performance outcomes in memory-intensive applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals facilitate robust connections and are preferred in certain applications for their durability.

No. of Words: 131072 words

Providing 131072 words of storage ensures substantial capacity, suitable for diverse applications ranging from firmware to configuration data.

Memory Width: 8

An 8-bit memory width allows for efficient data handling and compatibility with standard data buses in microcontroller applications.

Terminal Pitch: 2.54 mm

A pitch of 2.54 mm is a standard size that works well with other electronic components, ensuring reliability in assembly.

No. of Words Code: 128K

With a code density of 128K, this product is equipped to handle a considerable amount of data, meeting modern data storage needs.

Maximum Supply Voltage: 5.5 V

The maximum voltage rating of 5.5 V provides an extra margin for voltage spikes, hence protecting the chip and ensuring longevity.

Memory Density: 1048576 bit

With a memory density of 1048576 bits, this EPROM meets the demands for high-capacity applications in consumer electronics.

Memory IC Type: UVPROM

Using UVPROM technology allows for reprogramming of the chip, which offers flexibility and adaptability for developers.

Maximum Access Time: 150 ns

A maximum access time of 150 ns ensures quick read operations, making it suitable for high-speed applications.

Technical Specifications

EPROM M27C1001-15F1E attributes and parameters. Explore more EPROM devices from STMicroelectronics

Specs

Maximum Access Time:

150 ns

JESD-30 Code:

R-CDIP-T32

Length:

41.885 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.72 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M27C1001-15F1E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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