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SMJ27C256-15J

Texas Instruments

SMJ27C256-15J by Texas Instruments

SMJ27C256-15J by Texas Instruments is a 32KX8 EPROM with 3-STATE output, operating at -55 to 125 °C. It has a supply voltage range of 4.5V to 5.5V and max access time of 150 ns. Ideal for military-grade applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,560 parts In-Stock

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8,560

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Digiode

USA . 1,361 parts In-Stock

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1,361

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Distributors (Availability)

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Parana Technologies

USA . 979 parts In-Stock

1+ parts

$2.806

100+ parts

-

1k+ parts

$3.292

10k+ parts

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979

$2.806

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$3.292

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DigiPath Technology Company

USA . 850 parts In-Stock

1+ parts

$3.090

100+ parts

$2.843

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-

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850

$3.090

$2.843

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ChromeModa Solutions

Germany . 4,446 parts In-Stock

1+ parts

$3.153

100+ parts

$2.585

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4,446

$3.153

$2.585

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IDEA Electronic Components Group

UK . 2,367 parts In-Stock

1+ parts

$3.153

100+ parts

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$2.838

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2,367

$3.153

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$2.838

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One Stop Electronics

USA . 1,318 parts In-Stock

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$7.000

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1,318

$7.000

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AZTECH Wire

Italy . 681 parts In-Stock

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$13.866

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681

$13.866

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Corphita

USA . 4,668 parts In-Stock

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4,668

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Overview

Unlock the power of reliable data storage with the SMJ27C256-15J EPROM by Texas Instruments. Designed with precision and innovation, this high-quality memory IC offers unparalleled performance for a wide range of applications. With its military-grade temperature grade and 32KX8 organization, this device ensures optimal functionality and durability. Trust in Texas Instruments to provide cutting-edge technology that delivers value, benefits, and advantages to customers seeking top-notch memory solutions. Elevate your projects with the SMJ27C256-15J and experience the difference of superior quality and performance.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides durability and protection for the EPROM chip, ensuring it can withstand harsh environmental conditions.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with standard power sources, making it easy to integrate into existing systems.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this EPROM chip can reliably function in high-temperature environments without performance degradation.

Memory Density: 262144 bit

The high memory density of 262144 bits allows for storing a large amount of data, making it ideal for applications that require extensive memory capacity.

Maximum Access Time: 150 ns

With a maximum access time of 150 nanoseconds, data can be read from the EPROM chip quickly, ensuring efficient operation in time-sensitive applications.

Technical Specifications

EPROM SMJ27C256-15J attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

SMJ27C256-15J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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