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SMJ27C256-1JM

Texas Instruments

SMJ27C256-1JM by Texas Instruments

The Texas Instruments SMJ27C256-1JM is a 32KX8 EPROM with 3-STATE output, operating at -55 to 125 °C. It has a programming voltage of 13V and consumes up to 30mA. Ideal for military applications requiring high memory density and fast access times.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,216 parts In-Stock

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4,216

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Digiode

USA . 3,291 parts In-Stock

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3,291

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 327 parts In-Stock

1+ parts

$5.317

100+ parts

-

1k+ parts

$5.959

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327

$5.317

-

$5.959

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DigiPath Technology Company

USA . 2,298 parts In-Stock

1+ parts

$5.855

100+ parts

$5.386

1k+ parts

-

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2,298

$5.855

$5.386

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ChromeModa Solutions

Germany . 2,362 parts In-Stock

1+ parts

$5.974

100+ parts

$4.899

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2,362

$5.974

$4.899

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IDEA Electronic Components Group

UK . 1,286 parts In-Stock

1+ parts

$5.974

100+ parts

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1k+ parts

$5.377

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1,286

$5.974

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$5.377

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AZTECH Wire

Italy . 811 parts In-Stock

1+ parts

$8.948

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811

$8.948

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One Stop Electronics

USA . 953 parts In-Stock

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$20.000

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953

$20.000

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Corphita

USA . 4,175 parts In-Stock

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4,175

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Overview

Unlock the power of high-quality EPROM technology with Texas Instruments' SMJ27C256-1JM. Built to excel in demanding military-grade environments, this device offers unparalleled reliability and performance. Ideal for applications requiring secure data storage and quick access, the SMJ27C256-1JM provides customers with a valuable solution that delivers efficient operation and peace of mind. Trust Texas Instruments for superior EPROM technology that meets your needs with precision and excellence.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package material provides excellent durability and thermal performance, making it suitable for use in high-temperature and harsh environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with a wide range of systems and applications.

No. of Terminals: 28

Having 28 terminals allows for versatile connectivity options, enabling integration into various circuit designs.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this EPROM can reliably function in demanding industrial and military environments.

Memory Width: 8

The memory width of 8 bits offers sufficient storage capacity for data-intensive applications, ensuring efficient operation.

Technical Specifications

EPROM SMJ27C256-1JM attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

170 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T28

Memory Density:

262144 bit

Memory Width:

8

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SMJ27C256-1JM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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