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SMJ27C010-17JM

Texas Instruments

SMJ27C010-17JM by Texas Instruments

SMJ27C010-17JM by Texas Instruments is a 128KX8 EPROM with 3-STATE output, operating at -55 to 125 °C. It has a supply voltage of 4.5-5.5V and max access time of 170ns. Ideal for military-grade applications requiring reliable non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,606 parts In-Stock

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3,606

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Vyrian

USA . 3,178 parts In-Stock

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3,178

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Distributors (Availability)

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One Stop Electronics

USA . 1,485 parts In-Stock

1+ parts

$1.000

100+ parts

-

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1,485

$1.000

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Parana Technologies

USA . 129 parts In-Stock

1+ parts

$5.148

100+ parts

$478.048

1k+ parts

$4.633

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129

$5.148

$478.048

$4.633

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DigiPath Technology Company

USA . 895 parts In-Stock

1+ parts

$5.668

100+ parts

$5.215

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-

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895

$5.668

$5.215

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IDEA Electronic Components Group

UK . 2,140 parts In-Stock

1+ parts

$5.784

100+ parts

-

1k+ parts

$5.206

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2,140

$5.784

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$5.206

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ChromeModa Solutions

Germany . 491 parts In-Stock

1+ parts

$5.784

100+ parts

$4.743

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491

$5.784

$4.743

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AZTECH Wire

Italy . 405 parts In-Stock

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$19.377

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405

$19.377

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Corphita

USA . 3,015 parts In-Stock

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Overview

Upgrade your electronic devices with the high-quality SMJ27C010-17JM EPROM by Texas Instruments. Designed for reliability and performance, this ceramic, glass-sealed package offers 128Kx8 memory organization and 3-state output characteristics. Perfect for military-grade applications, this asynchronous EPROM operates at temperatures ranging from -55 to 125°C. Trust in Texas Instruments' reputation for excellence and unlock the potential of your projects with the SMJ27C010-17JM EPROM.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material provides durability and protection for the EPROM, ensuring longevity and reliability.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with common power supply systems, making it easy to integrate this EPROM into various applications.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent operation, making the EPROM suitable for a wide range of applications.

Memory Density: 1048576 bit

With a high memory density of 1048576 bits, this EPROM can store a large amount of data, making it ideal for applications that require extensive memory capacity.

Maximum Operating Temperature: 125 °C

The EPROM can operate efficiently at high temperatures up to 125°C, ensuring stability and performance in demanding thermal conditions.

Technical Specifications

EPROM SMJ27C010-17JM attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

170 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

SMJ27C010-17JM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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