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TMS27C128-15JL

Texas Instruments

TMS27C128-15JL by Texas Instruments

TMS27C128-15JL by Texas Instruments is a 16KX8 EPROM with 150ns access time, 5V supply voltage, and 3-STATE output. Commonly used in commercial applications, it features a ceramic package body, operates asynchronously, and has a memory density of 131072 bits.

Median Price

$27.103

Lifecycle Status

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Freelance Electronics

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Component Electronics Inc.

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Zilex Electronics Inc.

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Parana Technologies

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ChromeModa Solutions

Germany . 6,833 parts In-Stock

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IDEA Electronic Components Group

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One Stop Electronics

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AZTECH Wire

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Overview

Unlock the power of reliable and high-quality memory storage with the TMS27C128-15JL by Texas Instruments. This EPROM offers exceptional performance in a variety of applications, thanks to its innovative technology and precision manufacturing. Whether you're in need of secure data storage or fast program execution, this product delivers unmatched value, benefits, and advantages to meet your needs. Trust Texas Instruments for top-notch quality and performance, and experience the difference in your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package provides high durability and protection for the EPROM, making it suitable for harsh environments.

Nominal Supply Voltage / Vsup (V): 5

The EPROM operates at a standard 5V supply voltage, allowing for easy integration into existing systems.

Memory Density: 131072 bit

With a high memory density of 131072 bits, this EPROM can store a large amount of data efficiently.

Maximum Access Time: 150 ns

The fast access time of 150 ns ensures quick read/write operations, enhancing the overall performance of the EPROM.

Technical Specifications

EPROM TMS27C128-15JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Length:

36.83 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C128-15JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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