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TMS27C256-25JE

Texas Instruments

TMS27C256-25JE by Texas Instruments

TMS27C256-25JE by Texas Instruments is a 32KX8 EPROM with 250 ns access time, 3-STATE output, and operates at -40 to 85 °C. It is used in industrial applications for storing data securely with a memory density of 262144 bit.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,256 parts In-Stock

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Digiode

USA . 1,378 parts In-Stock

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1,378

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Fibra_Brandt Electronic GMBH

Germany . 21 parts In-Stock

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Advanced Electronics

New Zealand . 164 parts In-Stock

1+ parts

$2.768

100+ parts

$2.740

1k+ parts

$2.629

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164

$2.768

$2.740

$2.629

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Parana Technologies

USA . 1,735 parts In-Stock

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$4.300

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$4.726

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$4.300

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$4.726

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ChromeModa Solutions

Germany . 838 parts In-Stock

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$4.832

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$3.962

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838

$4.832

$3.962

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IDEA Electronic Components Group

UK . 655 parts In-Stock

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$4.832

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$4.349

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655

$4.832

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$4.349

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Semicontronic

India . 1,558 parts In-Stock

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$13.000

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$12.675

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$12.610

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1,558

$13.000

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One Stop Electronics

USA . 1,070 parts In-Stock

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$15.000

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$15.000

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AZTECH Wire

Italy . 680 parts In-Stock

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$18.172

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680

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Corphita

USA . 4,285 parts In-Stock

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DigiPath Technology Company

USA . 651 parts In-Stock

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$4.357

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Overview

Unlock the power of reliable data storage with the TMS27C256-25JE EPROM by Texas Instruments. Crafted with precision and quality, this ceramic, glass-sealed memory chip offers 32KX8 organization and 3-STATE output characteristics for seamless performance in industrial-grade applications. With a programming voltage of 13V and a maximum operating temperature of 85°C, this EPROM provides secure data storage with a maximum access time of 250ns. Trust Texas Instruments to deliver top-of-the-line technology that exceeds expectations. Choose the TMS27C256-25JE for unparalleled quality and reliability.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material ensures durability and protection for the EPROM, making it suitable for rugged environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent control of read and write operations, providing flexibility and efficient use of the EPROM.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard power sources, making it easy to integrate the EPROM into existing systems.

Memory Density: 262144 bit

The high memory density of 262144 bits allows for storing a large amount of data in the EPROM, making it suitable for applications requiring extensive memory storage.

Maximum Access Time: 250 ns

The fast maximum access time of 250 nanoseconds ensures quick data retrieval, making the EPROM ideal for high-speed applications.

Technical Specifications

EPROM TMS27C256-25JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Length:

36.83 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C256-25JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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