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TMX27C512-4JL

Texas Instruments

TMX27C512-4JL by Texas Instruments

TMX27C512-4JL by Texas Instruments is a 64KX8 EPROM with 5V supply, 450 ns access time, and 3-STATE output. It is used in commercial applications requiring reliable non-volatile memory storage in a rectangular ceramic package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,066 parts In-Stock

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4,066

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Digiode

USA . 1,473 parts In-Stock

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1,473

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 386 parts In-Stock

1+ parts

$4.907

100+ parts

-

1k+ parts

$5.440

10k+ parts

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386

$4.907

-

$5.440

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ChromeModa Solutions

Germany . 3,945 parts In-Stock

1+ parts

$5.514

100+ parts

$4.521

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3,945

$5.514

$4.521

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IDEA Electronic Components Group

UK . 1,210 parts In-Stock

1+ parts

$5.514

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-

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$4.963

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1,210

$5.514

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$4.963

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AZTECH Wire

Italy . 607 parts In-Stock

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$9.232

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607

$9.232

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One Stop Electronics

USA . 144 parts In-Stock

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$23.000

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144

$23.000

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Corphita

USA . 3,920 parts In-Stock

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3,920

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DigiPath Technology Company

USA . 2,183 parts In-Stock

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$4.971

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2,183

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$4.971

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Overview

Unlock the power of innovation with the TMX27C512-4JL EPROM by Texas Instruments. With a reputation for excellence in electronic components, Texas Instruments delivers superior quality and reliability. This versatile EPROM is perfect for a wide range of applications, offering customers value, benefits, and advantages beyond compare. Experience seamless operation, enhanced performance, and unmatched durability with the TMX27C512-4JL EPROM - the ultimate solution for all your memory needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material provides excellent protection and durability for the EPROM, making it suitable for various environmental conditions.

Nominal Supply Voltage: 5V

The 5V supply voltage ensures compatibility with standard voltage requirements and makes it easy to integrate the EPROM into existing systems.

No. of Words: 65536 words

The large number of words allows for storing a significant amount of data, making the EPROM ideal for applications requiring extensive memory capacity.

Memory IC Type: UVPROM

The use of UVPROM technology ensures reliable and non-volatile memory storage, enhancing data retention and security.

Maximum Access Time: 450 ns

The fast access time of 450 ns enables quick retrieval of data, making the EPROM suitable for high-speed applications.

Technical Specifications

EPROM TMX27C512-4JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

450 ns

JESD-30 Code:

R-GDIP-T28

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.84 mm

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

TMX27C512-4JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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