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TMX27C512JL

Texas Instruments

TMX27C512JL by Texas Instruments

TMX27C512JL by Texas Instruments is a 64KX8 EPROM with 5V supply voltage, operating in asynchronous mode. It features 3-STATE output and offers 524288 bits memory density. Ideal for commercial applications requiring fast access time of 250 ns in a rectangular ceramic package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,303 parts In-Stock

1+ parts

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7,303

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Digiode

USA . 4,014 parts In-Stock

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4,014

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 60 parts In-Stock

1+ parts

$2.038

100+ parts

-

1k+ parts

$2.562

10k+ parts

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60

$2.038

-

$2.562

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DigiPath Technology Company

USA . 1,175 parts In-Stock

1+ parts

$2.244

100+ parts

$2.065

1k+ parts

-

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1,175

$2.244

$2.065

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IDEA Electronic Components Group

UK . 2,042 parts In-Stock

1+ parts

$2.290

100+ parts

-

1k+ parts

$2.061

10k+ parts

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2,042

$2.290

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$2.061

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ChromeModa Solutions

Germany . 1,541 parts In-Stock

1+ parts

$2.290

100+ parts

$1.878

1k+ parts

-

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1,541

$2.290

$1.878

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AZTECH Wire

Italy . 666 parts In-Stock

1+ parts

$5.828

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666

$5.828

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One Stop Electronics

USA . 1,334 parts In-Stock

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$11.000

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1,334

$11.000

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Corphita

USA . 3,862 parts In-Stock

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3,862

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Overview

Unlock the power of reliable data storage with the TMX27C512JL EPROM by Texas Instruments. Crafted with precision and expertise, this ceramic, glass-sealed memory device offers unparalleled performance and durability. Perfect for a wide range of applications, from industrial to consumer electronics, this EPROM ensures seamless operation in any environment. Trust Texas Instruments to deliver quality products that exceed expectations. Elevate your projects with the TMX27C512JL EPROM and experience the benefits of superior technology.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material ensures durability and protection, making it ideal for rugged environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexibility in data access and retrieval, making it suitable for a variety of applications.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage provides standard power requirements, making it compatible with most systems.

Technology: CMOS

The CMOS technology offers low power consumption and high speed performance, making it energy-efficient and reliable.

Memory Density: 524288 bit

The high memory density allows for storing large amounts of data in a compact form factor, making it efficient for storage purposes.

Technical Specifications

EPROM TMX27C512JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

JESD-30 Code:

R-GDIP-T28

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.84 mm

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

TMX27C512JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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