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SMJ27C128-17JM

Texas Instruments

SMJ27C128-17JM by Texas Instruments

SMJ27C128-17JM by Texas Instruments is a 16KX8 EPROM with 125°C max temp, -55°C min temp, and 170 ns access time. Ideal for military applications due to its CMOS technology and 38535Q/M screening level.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,530 parts In-Stock

1+ parts

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8,530

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Digiode

USA . 1,859 parts In-Stock

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1,859

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Holdelec - ElecDif-Pro

France . 40 parts In-Stock

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40

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,114 parts In-Stock

1+ parts

$4.392

100+ parts

-

1k+ parts

$4.808

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2,114

$4.392

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$4.808

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DigiPath Technology Company

USA . 732 parts In-Stock

1+ parts

$4.836

100+ parts

$4.449

1k+ parts

-

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732

$4.836

$4.449

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ChromeModa Solutions

Germany . 4,509 parts In-Stock

1+ parts

$4.935

100+ parts

$4.047

1k+ parts

-

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4,509

$4.935

$4.047

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IDEA Electronic Components Group

UK . 1,500 parts In-Stock

1+ parts

$4.935

100+ parts

-

1k+ parts

$4.442

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1,500

$4.935

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$4.442

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AZTECH Wire

Italy . 544 parts In-Stock

1+ parts

$10.152

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544

$10.152

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One Stop Electronics

USA . 439 parts In-Stock

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$20.000

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439

$20.000

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Corphita

USA . 1,006 parts In-Stock

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1,006

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Overview

Experience unparalleled quality and reliability with the Texas Instruments SMJ27C128-17JM EPROM. Known for their superior manufacturing standards, Texas Instruments delivers a product that guarantees top-notch performance in various applications. Offering a seamless user experience, this EPROM provides exceptional value, benefits, and advantages to customers seeking dependable memory solutions. Trust Texas Instruments for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent durability and reliability, making the EPROM suitable for harsh environments and long-term use.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for flexible and independent control of read and write functions, enhancing overall performance and efficiency.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources and systems, making integration easier.

Output Characteristics: 3-STATE

The 3-STATE output feature allows for high-speed and efficient data transfer, reducing power consumption and improving overall system performance.

Temperature Grade: MILITARY

Designed to meet military-grade standards, this EPROM is built to withstand extreme temperatures and harsh conditions, ensuring reliable operation in demanding environments.

Technical Specifications

EPROM SMJ27C128-17JM attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

170 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

12.5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.0003 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

SMJ27C128-17JM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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