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TMS27C64-2JL

Texas Instruments

TMS27C64-2JL by Texas Instruments

TMS27C64-2JL by Texas Instruments is an 8KX8 EPROM with 70°C max temp, 200 ns access time, and 5V supply. Ideal for commercial applications requiring a CMOS technology UVPROM memory IC with 65536 bit density in a rectangular ceramic package.

Median Price

$17.150

Lifecycle Status

Suppliers In-Stock

25

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1k+

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Forefront Electronics and Design

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Electro Mavin

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PAR Electronics

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Corel Iberica Componentes, S.L.

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Parana Technologies

USA . 1,371 parts In-Stock

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DigiPath Technology Company

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ChromeModa Solutions

Germany . 6,868 parts In-Stock

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IDEA Electronic Components Group

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AZTECH Wire

Italy . 205 parts In-Stock

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Overview

Upgrade your electronics with the TMS27C64-2JL EPROM by Texas Instruments, a reliable and high-quality memory solution for a wide range of applications. With Texas Instruments' reputation for excellence in technology, you can trust that this EPROM will deliver outstanding performance and durability. Whether you're working on consumer electronics, industrial machinery, or automotive systems, this EPROM offers value, benefits, and advantages that will enhance your project and give you peace of mind. Choose Texas Instruments for innovation you can depend on.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides durability and reliability for the EPROM, ensuring long-lasting performance.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage makes it compatible with most standard electronic devices, allowing for easy integration.

Organization: 8KX8

The 8KX8 organization means the EPROM has a capacity of 8 kilowords by 8 bits, providing ample storage for data.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for high flexibility in controlling the output logic levels, enhancing versatility in application.

Technology: CMOS

The CMOS technology used in this EPROM results in low power consumption and high noise immunity, making it an efficient choice.

Maximum Access Time: 200 ns

The fast maximum access time of 200 nanoseconds ensures quick read and write operations, improving overall performance.

Technical Specifications

EPROM TMS27C64-2JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

12.5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C64-2JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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