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5962-8766106XA

Texas Instruments

5962-8766106XA by Texas Instruments

The Texas Instruments 5962-8766106XA is a MILITARY-grade EPROM with 16KX8 organization, 16384 words, and 131072 bit memory density. It operates in ASYNCHRONOUS mode with a supply voltage range of 4.5V to 5.5V. This UVPROM has a max access time of 250 ns and is suitable for military applications requiring reliable non-volatile memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,110 parts In-Stock

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4,110

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Vyrian

USA . 3,409 parts In-Stock

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3,409

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Electro Mavin

USA . 3 parts In-Stock

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Bristol Electronics

USA . 2 parts In-Stock

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Native Components

USA . 337 parts In-Stock

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$1.781

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337

$1.781

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Northwest PG Solutions

USA . 1,112 parts In-Stock

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$1.959

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Parana Technologies

USA . 300 parts In-Stock

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$2.910

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$3.409

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300

$2.910

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$3.409

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DigiPath Technology Company

USA . 2,244 parts In-Stock

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$3.205

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$2.948

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$3.205

$2.948

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ChromeModa Solutions

Germany . 3,606 parts In-Stock

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$3.270

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$2.681

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$3.270

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IDEA Electronic Components Group

UK . 801 parts In-Stock

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$3.270

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$2.943

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801

$3.270

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Semicontronic

India . 1,181 parts In-Stock

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$4.000

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$3.900

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$3.880

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AZTECH Wire

Italy . 451 parts In-Stock

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$4.880

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One Stop Electronics

USA . 991 parts In-Stock

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$9.000

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$9.000

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Corphita

USA . 3,587 parts In-Stock

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West Coast Incorporated

USA . 1,121 parts In-Stock

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Overview

Experience the unparalleled quality and reliability of Texas Instruments with the 5962-8766106XA EPROM. This military-grade memory IC offers a robust package body material and asynchronous operating mode for optimal performance in extreme conditions. With 16Kx8 organization and 3-STATE output characteristics, this UVPROM delivers exceptional memory density and fast access times. Trust Texas Instruments to provide cutting-edge technology in a durable package, perfect for a wide range of applications where high performance is crucial. Upgrade your systems with the 5962-8766106XA and experience the difference TI can make.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent protection to the internal components of the EPROM, ensuring durability and reliability.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for flexible communication and control, making it suitable for a variety of applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes this EPROM compatible with many systems and power sources.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this EPROM can withstand harsh environmental conditions and maintain performance.

Organization: 16KX8

The 16KX8 organization provides ample memory storage capacity and data organization for various applications.

Output Characteristics: 3-STATE

The 3-STATE output allows for efficient data transmission and control, enhancing the overall functionality of the EPROM.

Minimum Operating Temperature: -55 °C

Capable of operating in extreme cold temperatures, this EPROM provides reliability and performance in various environments.

Technology: CMOS

Using CMOS technology ensures low power consumption and high speed performance, making this EPROM energy-efficient and fast.

Technical Specifications

EPROM 5962-8766106XA attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

JESD-30 Code:

R-CDIP-T28

JESD-609 Code:

e0

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Trade Compliance

5962-8766106XA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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