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TMS27LV010A-20JE

Texas Instruments

TMS27LV010A-20JE by Texas Instruments

TMS27LV010A-20JE by Texas Instruments is a 128KX8 EPROM with 3.3V nominal voltage, operating in asynchronous mode. It features 200ns max access time and is commonly used in industrial applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,378 parts In-Stock

1+ parts

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4,378

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Digiode

USA . 2,867 parts In-Stock

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2,867

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,968 parts In-Stock

1+ parts

$3.352

100+ parts

-

1k+ parts

$3.877

10k+ parts

-

1,968

$3.352

-

$3.877

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DigiPath Technology Company

USA . 215 parts In-Stock

1+ parts

$3.691

100+ parts

-

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215

$3.691

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ChromeModa Solutions

Germany . 6,427 parts In-Stock

1+ parts

$3.766

100+ parts

$3.088

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-

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6,427

$3.766

$3.088

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IDEA Electronic Components Group

UK . 432 parts In-Stock

1+ parts

$3.766

100+ parts

-

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$3.389

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432

$3.766

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$3.389

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One Stop Electronics

USA . 285 parts In-Stock

1+ parts

$9.000

100+ parts

-

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285

$9.000

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AZTECH Wire

Italy . 780 parts In-Stock

1+ parts

$13.820

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780

$13.820

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Corphita

USA . 3,093 parts In-Stock

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Overview

Unlock the power of reliable data storage with the TMS27LV010A-20JE EPROM by Texas Instruments. Featuring superior quality and craftsmanship, this product offers unparalleled value for customers seeking dependable memory solutions. Perfect for industrial applications, this EPROM delivers fast access times and a wide operating temperature range, making it ideal for a variety of projects. Trust in Texas Instruments to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your designs with the TMS27LV010A-20JE EPROM today.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides excellent durability and protection for the EPROM chip, ensuring long-lasting performance.

Operating Mode: ASYNCHRONOUS

Enables flexible and independent operation, making it suitable for a wide range of applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a moderate voltage, helping to conserve energy.

Memory Density: 1048576 bit

Offers high memory density for storing large amounts of data in a compact form factor.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial environments.

Memory IC Type: UVPROM

Uses ultraviolet light for erasing and reprogramming data, providing reliable storage solutions.

Technical Specifications

EPROM TMS27LV010A-20JE attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T32

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3/5

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.000025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

TMS27LV010A-20JE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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