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TMS27C256-1JE4

Texas Instruments

TMS27C256-1JE4 by Texas Instruments

TMS27C256-1JE4 by Texas Instruments is a 32KX8 EPROM with 3-STATE output, operating at -40 to 85 °C. It has a supply voltage of 5V, programming voltage of 13V, and max access time of 170 ns. Commonly used in industrial applications for storing data securely due to its UVPROM memory technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,832 parts In-Stock

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Digiode

USA . 1,074 parts In-Stock

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1,074

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Parana Technologies

USA . 1,435 parts In-Stock

1+ parts

$3.063

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-

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$3.579

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1,435

$3.063

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$3.579

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DigiPath Technology Company

USA . 1,555 parts In-Stock

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$3.373

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$3.373

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ChromeModa Solutions

Germany . 2,607 parts In-Stock

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$3.442

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$2.822

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$3.442

$2.822

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IDEA Electronic Components Group

UK . 626 parts In-Stock

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$3.442

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$3.098

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626

$3.442

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One Stop Electronics

USA . 323 parts In-Stock

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$11.000

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323

$11.000

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AZTECH Wire

Italy . 222 parts In-Stock

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$14.687

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Corphita

USA . 2,270 parts In-Stock

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Overview

Unlock the power of reliable data storage with the TMS27C256-1JE4 by Texas Instruments. Designed with quality ceramic and glass-sealed materials, this EPROM offers unparalleled performance and durability for industrial applications. With a 32KX8 organization and 3-STATE output characteristics, this product ensures seamless operation. Experience the benefits of a trusted manufacturer like Texas Instruments and elevate your projects with the TMS27C256-1JE4.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material provides durability and protection for the EPROM, ensuring longevity and reliability in various operating conditions.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with common power sources, making it easy to integrate the EPROM into existing systems.

Organization: 32KX8

The 32KX8 organization offers a balance between memory capacity and access speed, making it suitable for a wide range of applications that require both storage space and quick data retrieval.

Technology: CMOS

The CMOS technology used in the EPROM results in low power consumption and high noise immunity, making it energy-efficient and reliable for long-term use.

Maximum Access Time: 170 ns

The fast maximum access time of 170 ns ensures quick read and write operations, improving overall system performance and responsiveness.

Technical Specifications

EPROM TMS27C256-1JE4 attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

170 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-GDIP-T28

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

13

Qualification:

Not Qualified

Maximum Seated Height:

4.907 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C256-1JE4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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